Full Text:   <371>

Summary:  <215>

CLC number: TN491; E963

On-line Access: 2017-10-25

Received: 2016-11-18

Revision Accepted: 2017-03-14

Crosschecked: 2017-09-30

Cited: 1

Clicked: 1649

Citations:  Bibtex RefMan EndNote GB/T7714

 ORCID:

Yong-jin Wang

http://orcid.org/0000-0001-8109-4640

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Frontiers of Information Technology & Electronic Engineering  2017 Vol.18 No.9 P.1288-1294

http://doi.org/10.1631/FITEE.1601720


On-chip optical interconnect using visible light


Author(s):  Wei Cai, Bing-cheng Zhu, Xu-min Gao, Yong-chao Yang, Jia-lei Yuan, Gui-xia Zhu, Yong-jin Wang, Peter GRÜNBERG

Affiliation(s):  Peter Grünberg Research Center, Nanjing University of Posts and Telecommunications, Nanjing 210003, China; more

Corresponding email(s):   wangyj@njupt.edu.cn

Key Words:  Homogeneous integration, Multiple-quantum-well diode, Visible light interconnection, Coexistence of light emission and photodetection


Wei Cai, Bing-cheng Zhu, Xu-min Gao, Yong-chao Yang, Jia-lei Yuan, Gui-xia Zhu, Yong-jin Wang, Peter GRÜNBERG. On-chip optical interconnect using visible light[J]. Frontiers of Information Technology & Electronic Engineering, 2017, 18(9): 1288-1294.

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author="Wei Cai, Bing-cheng Zhu, Xu-min Gao, Yong-chao Yang, Jia-lei Yuan, Gui-xia Zhu, Yong-jin Wang, Peter GRÜNBERG",
journal="Frontiers of Information Technology & Electronic Engineering",
volume="18",
number="9",
pages="1288-1294",
year="2017",
publisher="Zhejiang University Press & Springer",
doi="10.1631/FITEE.1601720"
}

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%T On-chip optical interconnect using visible light
%A Wei Cai
%A Bing-cheng Zhu
%A Xu-min Gao
%A Yong-chao Yang
%A Jia-lei Yuan
%A Gui-xia Zhu
%A Yong-jin Wang
%A Peter GRÜNBERG
%J Frontiers of Information Technology & Electronic Engineering
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%D 2017
%I Zhejiang University Press & Springer
%DOI 10.1631/FITEE.1601720

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T1 - On-chip optical interconnect using visible light
A1 - Wei Cai
A1 - Bing-cheng Zhu
A1 - Xu-min Gao
A1 - Yong-chao Yang
A1 - Jia-lei Yuan
A1 - Gui-xia Zhu
A1 - Yong-jin Wang
A1 - Peter GRÜNBERG
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PB - Zhejiang University Press & Springer
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DOI - 10.1631/FITEE.1601720


Abstract: 
We propose and fabricate a monolithic optical interconnect on a GaN-on-silicon platform using a wafer-level technique. Because the InGaN/GaN multiple-quantum-well diodes (MQWDs) can achieve light emission and detection simultaneously, the emitter and collector sharing identical MQW structure are produced using the same process. Suspended waveguides interconnect the emitter with the collector to form in-plane light coupling. Monolithic optical interconnect chip integrates the emitter, waveguide, base, and collector into a multi-component system with a common base. Output states superposition and 1×2 in-plane light communication are experimentally demonstrated. The proposed monolithic optical interconnect opens a promising way toward the diverse applications from in-plane visible light communication to light-induced artificial synaptic devices, intelligent display, on-chip imaging, and optical sensing.

同质集成可见光互联芯片

概要:本文采用晶圆级微纳加工技术,基于硅衬底氮化镓晶圆,提出并制备了同质集成发射极、集电极和基极的可见光互联芯片。利用InGaN/GaN量子阱二极管器件发光探测共存的特性,芯片的发射极和集电极采用相同的量子阱结构,并通过相同的制备工艺实现。发射极和集电极之间通过悬空的光波导连接,实现器件之间的光互联。同质集成可见光互联芯片集成两个共基极的光致晶体管,实现芯片内可见光的发射、传输和探测功能。该可见光互联芯片可以广泛应用于光致类脑神经形态芯片、芯片内可见光通信、智能显示、微纳成像及光传感等领域。

关键词:同质集成;量子阱二极管;可见光互联;发光探测共存现象

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

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