CLC number: TN386.1
On-line Access: 2020-01-13
Received: 2019-07-19
Revision Accepted: 2019-11-14
Crosschecked: 2019-12-12
Cited: 0
Clicked: 5031
Citations: Bibtex RefMan EndNote GB/T7714
http://orcid.org/0000-0003-4995-0085
Xiang-lei He, Rui-jie Tang, Feng Yang, Mayameen S. Kadhim, Jie-xin Wang, Yuan Pu, Dan Wang. Zirconia quantum dots for a nonvolatile resistive random access memory device[J]. Frontiers of Information Technology & Electronic Engineering, 2019, 20(12): 1698-1705.
@article{title="Zirconia quantum dots for a nonvolatile resistive random access memory device",
author="Xiang-lei He, Rui-jie Tang, Feng Yang, Mayameen S. Kadhim, Jie-xin Wang, Yuan Pu, Dan Wang",
journal="Frontiers of Information Technology & Electronic Engineering",
volume="20",
number="12",
pages="1698-1705",
year="2019",
publisher="Zhejiang University Press & Springer",
doi="10.1631/FITEE.1900363"
}
%0 Journal Article
%T Zirconia quantum dots for a nonvolatile resistive random access memory device
%A Xiang-lei He
%A Rui-jie Tang
%A Feng Yang
%A Mayameen S. Kadhim
%A Jie-xin Wang
%A Yuan Pu
%A Dan Wang
%J Frontiers of Information Technology & Electronic Engineering
%V 20
%N 12
%P 1698-1705
%@ 2095-9184
%D 2019
%I Zhejiang University Press & Springer
%DOI 10.1631/FITEE.1900363
TY - JOUR
T1 - Zirconia quantum dots for a nonvolatile resistive random access memory device
A1 - Xiang-lei He
A1 - Rui-jie Tang
A1 - Feng Yang
A1 - Mayameen S. Kadhim
A1 - Jie-xin Wang
A1 - Yuan Pu
A1 - Dan Wang
J0 - Frontiers of Information Technology & Electronic Engineering
VL - 20
IS - 12
SP - 1698
EP - 1705
%@ 2095-9184
Y1 - 2019
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/FITEE.1900363
Abstract: We propose a nonvolatile resistive random access memory device by employing nanodispersion of zirconia (ZrO2) quantum dots (QDs) for the formation of an active layer. The memory devices comprising a typical sandwich structure of Ag (top)/ZrO2 (active layer)/Ti (bottom) are fabricated using a facile spin-coating method. The optimized device exhibits a high resistance state/low resistance state resistance difference (about 10 Ω), a good cycle performance (the number of cycles larger than 100), and a relatively low conversion current (about 1 μA). Atomic force microscopy and scanning electron microscope are used to observe the surface morphology and stacking state of the ZrO2 active layer. Experimental results show that the ZrO2 active layer is stacked compactly and has a low roughness (Ra=4.49 nm) due to the uniform distribution of the ZrO2 QDs. The conductive mechanism of the Ag/ZrO2/Ti device is analyzed and studied, and the conductive filaments of Ag ions and oxygen vacancies are focused on to clarify the resistive switching memory behavior. This study offers a facile approach of memristors for future electronic applications.
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