CLC number: TN92; TN43
On-line Access: 2024-08-27
Received: 2023-10-17
Revision Accepted: 2024-05-08
Crosschecked: 2023-01-21
Cited: 0
Clicked: 2247
Jie CUI, Peipei LI, Weixing SHENG. High linearity U-band power amplifier design: a novel intermodulation point analysis method[J]. Frontiers of Information Technology & Electronic Engineering, 2023, 24(1): 176-186.
@article{title="High linearity U-band power amplifier design: a novel intermodulation point analysis method",
author="Jie CUI, Peipei LI, Weixing SHENG",
journal="Frontiers of Information Technology & Electronic Engineering",
volume="24",
number="1",
pages="176-186",
year="2023",
publisher="Zhejiang University Press & Springer",
doi="10.1631/FITEE.2200082"
}
%0 Journal Article
%T High linearity U-band power amplifier design: a novel intermodulation point analysis method
%A Jie CUI
%A Peipei LI
%A Weixing SHENG
%J Frontiers of Information Technology & Electronic Engineering
%V 24
%N 1
%P 176-186
%@ 2095-9184
%D 2023
%I Zhejiang University Press & Springer
%DOI 10.1631/FITEE.2200082
TY - JOUR
T1 - High linearity U-band power amplifier design: a novel intermodulation point analysis method
A1 - Jie CUI
A1 - Peipei LI
A1 - Weixing SHENG
J0 - Frontiers of Information Technology & Electronic Engineering
VL - 24
IS - 1
SP - 176
EP - 186
%@ 2095-9184
Y1 - 2023
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/FITEE.2200082
Abstract: A power amplifier’s linearity determines the emission signal’s quality and the efficiency of the system. Nonlinear distortion can result in system bit error, out-of-band radiation, and interference with other channels, which severely influence communication system’s quality and reliability. Starting from the third-order intermodulation point of the milimeter wave (mm-Wave) power amplifiers, the circuit’s nonlinearity is compensated for. The analysis, design, and implementation of linear class AB mm-Wave power amplifiers based on GlobalFoundries 45 nm CMOS silicon-on-insulator (SOI) technology are presented. Three single-ended and differential stacked power amplifiers have been implemented based on cascode cells and triple cascode cells operating in U-band frequencies. According to nonlinear analysis and on-wafer measurements, designs based on triple cascode cells outperform those based on cascode cells. Using single-ended measurements, the differential power amplifier achieves a measured peak power-added efficiency (PAE) of 47.2% and a saturated output power (Psat) of 25.2 dBm at 44 GHz. The amplifier achieves a Psat higher than 23 dBm and a maximum PAE higher than 25% in the measured bandwidth from 44 GHz to 50 GHz.
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