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Bio-Design and Manufacturing  2018 Vol.1 No.4 P.427-430

10.1631/jzus.2000.0427


AN ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION SYSTEM AND Si, GeSi EPITAXY ON A THREE-INCH Si WAFER


Author(s):  HUANG Jing-yun, YE Zhi-zhen, LU Huan-ming, ZHAO Bing-hui, WANG Lei, QUE Duan-lin

Affiliation(s):  State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027

Corresponding email(s):   silab@cmsce.zju.edu.cn

Key Words:  UHV/CVD, silicon, germanium-silicon, epitaxy


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HUANG Jing-yun, YE Zhi-zhen, LU Huan-ming, ZHAO Bing-hui, WANG Lei, QUE Duan-lin. AN ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION SYSTEM AND Si, GeSi EPITAXY ON A THREE-INCH Si WAFER[J]. Journal of Zhejiang University Science D, 2018, 1(4): 427-430.

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author="HUANG Jing-yun, YE Zhi-zhen, LU Huan-ming, ZHAO Bing-hui, WANG Lei, QUE Duan-lin",
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pages="427-430",
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publisher="Zhejiang University Press & Springer",
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A1 - LU Huan-ming
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A1 - QUE Duan-lin
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Abstract: 
An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system with reflection high energy electron diffraction (RHEED) was introduced. The Si epilayers and SiGe strained-layers on three-inch Si (100) substrates were grown in this UHV/CVD system. The substrate temperature during growth was from 550°C to 780°C. The properties of epilayers were characterized by high-resolution cross-sectional transmission electron microscopy (TEM), double crystal X-ray diffraction (DCXRD), and spreading resistance (SPR). A B-doped SiGe epilayer with uniform resistivity distribution was grown.

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