Full Text:   <1496>

CLC number: TN431.1

On-line Access: 

Received: 2001-11-12

Revision Accepted: 2002-05-06

Crosschecked: 0000-00-00

Cited: 0

Clicked: 3760

Citations:  Bibtex RefMan EndNote GB/T7714

-   Go to

Article info.
1. Reference List
Open peer comments

Journal of Zhejiang University SCIENCE A 2002 Vol.3 No.5 P.553~558

http://doi.org/10.1631/jzus.2002.0553


A novel voltage output integrated circuit temperature sensor


Author(s):  WU Xiao-bo, ZHAO Meng-lian, YAN Xiao-lang, YAN Xiao-lang

Affiliation(s):  Institute of Very Large Scale Integrated Circuit Design, Zhejiang University, Hangzhou 310027, China; more

Corresponding email(s):   wuxb@vlsi.zju.edu.cn

Key Words:  Temperature sensing, IC (integrated circuit) sensor, Thermal matching


Share this article to: More

WU Xiao-bo, ZHAO Meng-lian, YAN Xiao-lang, YAN Xiao-lang. A novel voltage output integrated circuit temperature sensor[J]. Journal of Zhejiang University Science A, 2002, 3(5): 553~558.

@article{title="A novel voltage output integrated circuit temperature sensor",
author="WU Xiao-bo, ZHAO Meng-lian, YAN Xiao-lang, YAN Xiao-lang",
journal="Journal of Zhejiang University Science A",
volume="3",
number="5",
pages="553~558",
year="2002",
publisher="Zhejiang University Press & Springer",
doi="10.1631/jzus.2002.0553"
}

%0 Journal Article
%T A novel voltage output integrated circuit temperature sensor
%A WU Xiao-bo
%A ZHAO Meng-lian
%A YAN Xiao-lang
%A YAN Xiao-lang
%J Journal of Zhejiang University SCIENCE A
%V 3
%N 5
%P 553~558
%@ 1869-1951
%D 2002
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.2002.0553

TY - JOUR
T1 - A novel voltage output integrated circuit temperature sensor
A1 - WU Xiao-bo
A1 - ZHAO Meng-lian
A1 - YAN Xiao-lang
A1 - YAN Xiao-lang
J0 - Journal of Zhejiang University Science A
VL - 3
IS - 5
SP - 553
EP - 558
%@ 1869-1951
Y1 - 2002
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.2002.0553


Abstract: 
The novel integrated circuit (IC) temperature sensor presented in this paper works similarly as a two-terminal Zener, has breakdown voltage directly proportional to Kelvin temperature at 10 mV/°C, with typical error of less than ±1.0°C over a temperature range from -50°C to +125°C. In addition to all the features that conventional IC temperature sensors have, the new device also has very low static power dissipation (0.5 mW), low output impedance (less than 1Ω), excellent stability, high reproducibility, and high precision. The sensor's circuit design and layout are discussed in detail. Applications of the sensor include almost any type of temperature sensing over the range of -50°C - +125°C. The low impedance and linear output of the device make interfacing the readout or control circuitry especially easy. Due to the excellent performance and low cost of this sensor, more applications of the sensor over wide temperature range are expected.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

Reference

[1] Amador, R., Polanco, A., 1998. Technological compensation circuit for accurate temperature sensor. Sensors and Actuators, A69:172-177.

[2] Amador, R., Polanco, A., Nagy, A., 1999. The spread of and V go and its influence on the sensitivity of a bipolar IC Celsius sensor. Sensors and Actuators, A77:9-13.

[3] Behzad, R., 2001. Design of Analog CMOS Integrated Circuits. McGraw-Hill Higher Education, New York.

[4] Bianchi, R.A., Karam, J.M., Courtois, B., Nadal, R., Pressecq, F., Sifflet, S., 2000. CMOS-compatible temperature sensor with digital output for wide temperature range applications. Microelectronics Journal, 31:803-810.

[5] Meijer, G. C. M., 1980. An IC temperature transducer with an intrinsic reference. IEEE Journal of Solid-State Circuits, SC-15(3):370-373.

[6] Montane, E., Bota, S. A., Samitier, J., 1998. A compact temperature sensor for a 1.0μm CMOS technology using lateral p-n-p transistors: Microelectronics Journal, 29:277-281.

[7] Moore, B. D., 1999. Tradeoffs in selecting IC temperature sensors. Microprocessors and Microsystems. 23:181-184.

[8] Pease, R. A., 1984. A new Fahrenheit temperature sensor. IEEE Journal of Solid-State Circuits. SC-19(6):971-977.

[9] Tsividis, Y. P., 1980. Accurate analysis of temperature effects in IC-VBE characteristics with application to bandgap reference sources. IEEE Journal of Solid-State Circuits, SC-15(6):1076-1083.

[10] Wang, G., Meijer, G. C. M., 2000. The temperature characteristics of bipolar transistors fabricated in CMOS technology. Sensors and Actuators, A87:81-89.

Open peer comments: Debate/Discuss/Question/Opinion

<1>

Please provide your name, email address and a comment





Journal of Zhejiang University-SCIENCE, 38 Zheda Road, Hangzhou 310027, China
Tel: +86-571-87952783; E-mail: cjzhang@zju.edu.cn
Copyright © 2000 - Journal of Zhejiang University-SCIENCE