Full Text:   <3284>

CLC number: TN3

On-line Access: 2007-12-14

Received: 2007-06-25

Revision Accepted: 2007-09-30

Crosschecked: 0000-00-00

Cited: 3

Clicked: 6732

Citations:  Bibtex RefMan EndNote GB/T7714

-   Go to

Article info.
Open peer comments

Journal of Zhejiang University SCIENCE A 2008 Vol.9 No.1 P.137-142


Hole transport and phonon scattering in epitaxial PbSe films

Author(s):  Jian-xiao SI, Hui-zhen WU, Tian-ning XU, Chun-fang CAO

Affiliation(s):  Department of Physics, Zhejiang University, Hangzhou 310027, China; more

Corresponding email(s):   xjsi@zju.edu.cn, hzwu@zju.edu.cn

Key Words:  Electrical properties of PbSe, Mobility, Scattering mechanism

Jian-xiao SI, Hui-zhen WU, Tian-ning XU, Chun-fang CAO. Hole transport and phonon scattering in epitaxial PbSe films[J]. Journal of Zhejiang University Science A, 2008, 9(1): 137-142.

@article{title="Hole transport and phonon scattering in epitaxial PbSe films",
author="Jian-xiao SI, Hui-zhen WU, Tian-ning XU, Chun-fang CAO",
journal="Journal of Zhejiang University Science A",
publisher="Zhejiang University Press & Springer",

%0 Journal Article
%T Hole transport and phonon scattering in epitaxial PbSe films
%A Jian-xiao SI
%A Hui-zhen WU
%A Tian-ning XU
%A Chun-fang CAO
%J Journal of Zhejiang University SCIENCE A
%V 9
%N 1
%P 137-142
%@ 1673-565X
%D 2008
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.A071350

T1 - Hole transport and phonon scattering in epitaxial PbSe films
A1 - Jian-xiao SI
A1 - Hui-zhen WU
A1 - Tian-ning XU
A1 - Chun-fang CAO
J0 - Journal of Zhejiang University Science A
VL - 9
IS - 1
SP - 137
EP - 142
%@ 1673-565X
Y1 - 2008
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.A071350

The combined characterizations of mobility and phonon scattering spectra allow us to probe hole transport process in epitaxial PbSe crystalline films grown by molecular beam epitaxy (MBE). The measurements of Hall effect show p-type conductivity of PbSe epitaxial films. At 295 K, the PbSe samples display hole concentrations of (5~8)×1017 cm–3 with mobilities of about 300 cm2/(V·s), and at 77 K the hole mobility is as high as 3×103 cm2/(V·s). Five scattering mechanisms limiting hole mobilities are theoretically analyzed. The calculations and Raman scattering measurements show that, in the temperatures between 200 and 295 K, the scattering of polar optical phonon modes dominates the impact on the observed hole mobility in the epitaxial PbSe films. Raman spectra characterization observed strong optical phonon scatterings at high temperature in the PbSe epitaxial films, which is consistent with the result of the measured hole mobility.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article


[1] Allgaier, R.S., Scanlon, W.W., 1958. Mobility of electrons and holes in PbS, PbSe, and PbTe between room temperature and 4.2 K. Physical Review, 111(4):1029-1037.

[2] Aven, M., Segall, B., 1963. Carrier mobility and shallow impurity states in ZnSe and ZnTe. Physical Review, 130(1):81-91.

[3] Bardeen, J., Shockley, W., 1950. Deformation potential and mobilities in non-polar crystals. Physical Review, 80(1):72-80.

[4] Berlincourt, D., Jaffr, H., 1963. Eletroelastic properties of the sulfides, selenides, and tellurides of zinc and cadmium. Physical Review, 129(3):1009-1017.

[5] Brown, D., Bray, R., 1962. Analysis of lattice and ionized impurity scattering in p-type Germanium. Physical Review, 127:1593-1602.

[6] Cao, C.F., Wu, H.Z., Si, J.X., Xu, T.N., Chen, J., Shen, W.Z., 2006. Abnormal Raman spectra of PbTe crystalline thin films grown by molecular beam epitaxy. Acta Physica Sinica, 55:2021-2025 (in Chinese).

[7] Chattopadhyay, H.D., Queisser, H.J., 1981. Electron scattering by ionized impurities in semiconductors. Reviews of Modern Physics, 53(4):745-768.

[8] Chen, J., Shen, W.Z., 2006. Raman study of phonon modes and disorder effects in Pb1–xSrxSe alloys grown by molecular beam epitaxy. J. Appl. Phys., 99(1):013513-013517.

[9] Dashevsky, Z., Belenchuk, A., Gartstein, E., Shapoval, O., 2004. PbTe films grown by hot wall epitaxy on sapphire substrates. Thin Solid Films, 461(2):256-265.

[10] Hohnke, D.K., Kaiser, S.W., 1974. Epitaxial PbSe and Pb1–xSnxSe: Growth and electrical properties. J. Appl. Phys., 45(2):892-897.

[11] Lee, T.D., Low, F.E., Pines, D., 1953. The motion of slow electrons in a polar crystal. Physical Review, 90(2):297-302.

[12] Martinez, G., Schluter, M., 1975. Electronic structure of PbSe and PbTe. I. Band structures, densities of states and effective masses. Phys. Rev. B, 11(2):651-659.

[13] Matsushita, Y., Bluhm, H., Geballe, T.H., Fisher, I.R., 2005. Evidence for change kondo effect in superconducting Tl-doped PbTe. Physical Review Letters, 94(15):157002-157005.

[14] Ovsyannikov, S.V., Shchennikov, V.V., Ponosov, Y.S., Gudina, S.V., Guk, V.G., Skipetrov, E.P., Mogilenskikh, V.E., 2004. Application of the high-pressure thermoelectric technique for characterization of semiconductor microsamples: PbX-based compounds. Journal of Physics D: Applied Physics, 37(8):1151-1157.

[15] Romero, H.E., Drndic, M., 2005. Coulomb blockade and hopping conduction in PbSe quantum dots. Physical Review Letters, 95(15):156801-15804.

[16] Shi, Z., Lv, X., Zhao, F., Majumdar, A., Ray, D., Singh, R., Yan, X.J., 2004. [110] orientated lead salt midinfrared lasers. Appl. Phys. Lett., 85(15):2999-3001.

[17] Si, J.X., Wu, H.Z., Xu, T.N., Cao, C.F., Huang, Z.C., 2005. Microstructural properties of single crystalline PbTe thin films grown on BaF2(111) by molecular beam epitaxy. Chin. Phys. Lett., 22:2352-2356.

[18] Springholz, G., Ueta, A.Y, Fran, N., Bauer, G., 1996. Spiral growth and threading dislocations for molecular beam epitaxy of PbTe on BaF2(111) studied by scanning tunneling microscopy. Appl. Phys. Lett., 69(19):2822-2824.

[19] Tetyorkin, V.V., Sipatov, A.Y., Sizov, F.F., Fedorenko, A.I., Fedorov, A., 1996. (001)-oriented lead selenide films grown on silicon substrates. Infrared Physics & Technology, 37(3):379-384.

[20] Upadhyaya, K.S., Yadav, M., Upadhyaya, G.K., 2002. Lattice dynamics of IV-VI ionic semiconductors: an application to lead chalcogenides. Phys. Stat. Sol. (B), 229(3):1129-1138.

[21] Wu, H.Z., Dai, N., McCann, P.J., 2002. Experimental determination of deformation potentials and band non-parabolicity parameters for PbSe. Phys. Rev. B, 66(4):045303-045309.

[22] Xu, T.N., Wu, H.Z., Si, J.X., Cao, C.F., 2007. Observation of triangle pits in PbSe grown by molecular beam epitaxy. Appl. Surf. Science, 253(12):5457-5461.

[23] Yang, A.L., Wu, H.Z., Li, Z., Qiu, D.J., Chang, Y., Li, J.F., McCann, P.J., Fang, X.F., 1999. Raman scattering study of PbSe growth on (111) BaF2 substrate. Chin. Phys. Lett., 17:606-609.

[24] Zogg, H., Huppi, M., 1985. Growth of high quality epitaxial PbSe onto Si using a (Ca, Ba)F2 buffer layer. Appl. Phys. Lett., 47(2):133-135.

Open peer comments: Debate/Discuss/Question/Opinion


Please provide your name, email address and a comment

Journal of Zhejiang University-SCIENCE, 38 Zheda Road, Hangzhou 310027, China
Tel: +86-571-87952783; E-mail: cjzhang@zju.edu.cn
Copyright © 2000 - 2024 Journal of Zhejiang University-SCIENCE