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Journal of Zhejiang University SCIENCE A 2009 Vol.10 No.3 P.464~470

http://doi.org/10.1631/jzus.A0820572


Preparation of AlN thin films for film bulk acoustic resonator application by radio frequency sputtering


Author(s):  Kan LI, Hao JIN, De-miao WANG, Yi-fei TANG

Affiliation(s):  Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China

Corresponding email(s):   hjin@zju.edu.cn

Key Words:  Aluminum nitride (AlN), Piezoelectric thin film, Radio frequency (RF) reactive sputtering, Preferred orientation, Film bulk acoustic resonator (FBAR)


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Kan LI, Hao JIN, De-miao WANG, Yi-fei TANG. Preparation of AlN thin films for film bulk acoustic resonator application by radio frequency sputtering[J]. Journal of Zhejiang University Science A, 2009, 10(3): 464~470.

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%A Yi-fei TANG
%J Journal of Zhejiang University SCIENCE A
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%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.A0820572

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T1 - Preparation of AlN thin films for film bulk acoustic resonator application by radio frequency sputtering
A1 - Kan LI
A1 - Hao JIN
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A1 - Yi-fei TANG
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PB - Zhejiang University Press & Springer
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DOI - 10.1631/jzus.A0820572


Abstract: 
aluminum nitride (AlN) thin films with high c-axis orientation have been prepared on a glass substrate with an Al bottom electrode by radio frequency (RF) reactive magnetron sputtering. Based on the analysis of Berg’s hysteresis model, the improved sputtering system is realized without a hysteresis effect. A new control method for rapidly depositing highly c-axis oriented AlN thin films is proposed. The N2 concentration could be controlled by observing the changes in cathode voltage, to realize the optimum processing condition where the target could be fixed stably in the transition region, and both stoichiometric film composition and a high deposition rate could be obtained. Under a 500 W RF power of a target with a 6 cm diameter, a substrate temperature of 450 °C, a target-substrate distance of 60 mm and a N2 concentration of 25%, AlN thin film with preferential (002) orientation was deposited at 2.3 μm/h which is a much higher rate than previously achieved. Through X-ray diffraction (XRD) analysis, the full width at half maximum (FWHM) of AlN (002) was shown to be about 0.28°, which shows the good crystallinity and crystal orientation of AlN thin film. With other parameters held constant, any increase or decrease in N2 concentration results in an increase in the FWHM of AlN.

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Reference

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