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CLC number: O472+.5

On-line Access: 2011-07-04

Received: 2010-12-31

Revision Accepted: 2011-02-27

Crosschecked: 2011-06-21

Cited: 3

Clicked: 3028

Citations:  Bibtex RefMan EndNote GB/T7714

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Journal of Zhejiang University SCIENCE A 2011 Vol.12 No.7 P.561-566


Electrical and magnetic properties of ZnNiO thin films deposited by pulse laser deposition

Author(s):  Jie Jiang, Xue-tao Wang, Li-ping Zhu, Li-qiang Zhang, Zhi-guo Yang, Zhi-zhen Ye

Affiliation(s):  State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

Corresponding email(s):   zlp1@zju.edu.cn

Key Words:  ZnNiO thin films, Electric property, Ferromagnetic, Transmittance, Pulsed laser deposition (PLD)

Jie Jiang, Xue-tao Wang, Li-ping Zhu, Li-qiang Zhang, Zhi-guo Yang, Zhi-zhen Ye. Electrical and magnetic properties of ZnNiO thin films deposited by pulse laser deposition[J]. Journal of Zhejiang University Science A, 2011, 12(7): 561-566.

@article{title="Electrical and magnetic properties of ZnNiO thin films deposited by pulse laser deposition",
author="Jie Jiang, Xue-tao Wang, Li-ping Zhu, Li-qiang Zhang, Zhi-guo Yang, Zhi-zhen Ye",
journal="Journal of Zhejiang University Science A",
publisher="Zhejiang University Press & Springer",

%0 Journal Article
%T Electrical and magnetic properties of ZnNiO thin films deposited by pulse laser deposition
%A Jie Jiang
%A Xue-tao Wang
%A Li-ping Zhu
%A Li-qiang Zhang
%A Zhi-guo Yang
%A Zhi-zhen Ye
%J Journal of Zhejiang University SCIENCE A
%V 12
%N 7
%P 561-566
%@ 1673-565X
%D 2011
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.A1000525

T1 - Electrical and magnetic properties of ZnNiO thin films deposited by pulse laser deposition
A1 - Jie Jiang
A1 - Xue-tao Wang
A1 - Li-ping Zhu
A1 - Li-qiang Zhang
A1 - Zhi-guo Yang
A1 - Zhi-zhen Ye
J0 - Journal of Zhejiang University Science A
VL - 12
IS - 7
SP - 561
EP - 566
%@ 1673-565X
Y1 - 2011
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.A1000525

znNiO thin films with different contents of Ni (0–10 at.%) were fabricated on quartz and Si (100) substrates by pulsed laser deposition (PLD). We measured the samples by X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectrometer (UV-VIS), and Hall testing. When the Ni contents were below 3 at.%, partial Zn2+ ions were replaced by the Ni2+ ions without forming any other phases, which enhanced the conductivity of the film. When the Ni contents were above 3 at.%, Ni ions were at the interstitial sites, and Ni-related clusters and defects were able to emerge in the films, resulting in a worsening of electrical and optical properties. A ferromagnetic hysteresis with a coercive force of approximately 30 Oe was observed in the ZnNiO film with a Ni content of 3 at.% at room temperature.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article


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