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CLC number: TN432

On-line Access: 2011-04-11

Received: 2010-05-31

Revision Accepted: 2010-07-07

Crosschecked: 2011-02-28

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Journal of Zhejiang University SCIENCE C 2011 Vol.12 No.4 P.317-322

http://doi.org/10.1631/jzus.C1000178


GaAs pHEMT multi-band/multi-mode SP9T switch for quad-band GSM and UMTS handsets applications


Author(s):  Xiao-ying Wang, Wen-ting Guo, Yang-yang Peng, Wen-quan Sui

Affiliation(s):  Zhejiang California International Nanosystems Institute (ZCNI), Zhejiang University, Hangzhou 310029, China

Corresponding email(s):   xiaoying8581@163.com, goldenglobe99@hotmail.com

Key Words:  GSM, UMTS, Single-pole nine-throw (SP9T), pHEMT, Encoder, DC boost


Xiao-ying Wang, Wen-ting Guo, Yang-yang Peng, Wen-quan Sui. GaAs pHEMT multi-band/multi-mode SP9T switch for quad-band GSM and UMTS handsets applications[J]. Journal of Zhejiang University Science C, 2011, 12(4): 317-322.

@article{title="GaAs pHEMT multi-band/multi-mode SP9T switch for quad-band GSM and UMTS handsets applications",
author="Xiao-ying Wang, Wen-ting Guo, Yang-yang Peng, Wen-quan Sui",
journal="Journal of Zhejiang University Science C",
volume="12",
number="4",
pages="317-322",
year="2011",
publisher="Zhejiang University Press & Springer",
doi="10.1631/jzus.C1000178"
}

%0 Journal Article
%T GaAs pHEMT multi-band/multi-mode SP9T switch for quad-band GSM and UMTS handsets applications
%A Xiao-ying Wang
%A Wen-ting Guo
%A Yang-yang Peng
%A Wen-quan Sui
%J Journal of Zhejiang University SCIENCE C
%V 12
%N 4
%P 317-322
%@ 1869-1951
%D 2011
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.C1000178

TY - JOUR
T1 - GaAs pHEMT multi-band/multi-mode SP9T switch for quad-band GSM and UMTS handsets applications
A1 - Xiao-ying Wang
A1 - Wen-ting Guo
A1 - Yang-yang Peng
A1 - Wen-quan Sui
J0 - Journal of Zhejiang University Science C
VL - 12
IS - 4
SP - 317
EP - 322
%@ 1869-1951
Y1 - 2011
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.C1000178


Abstract: 
A multi-band/multi-mode single-pole nine-throw (SP9T) switch for GSM/UMTS (global system for mobile communications/universal mobile telecommunication system) systems is demonstrated. The switch consists of a GaAs 0.5 μm pseudomorphic high-electron mobility transistor (pHEMT) radio frequency (RF) switches module and Si complementary metal–oxide–semiconductor (COMS) digital module with an encoder and a DC boost circuit. High isolation and high linearity are achieved by a series-shunt switch structure and the DC boost circuit, respectively. The switch shows a measured insertion loss of 0.4 dB at 0.8 GHz for GSM transmit arms, 0.7 dB at 0.9 GHz and 0.9 dB at 1.8 GHz for GSM receive arms, and 0.6 dB at 1.8 GHz for UMTS arms. The switch introduces 2nd and 3rd harmonic suppression levels less than 64 dBc at 37 dBm input power. Isolations between transmit and receive terminals are more than 48 dB when one transmit arm is activated. The size of the RF switches module is 1.5 mm×1.1 mm, and the size of the digital module is 1.3 mm×0.63 mm with gold bonding wires connecting these two modules.

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Reference

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