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CLC number: TN405

On-line Access: 2013-04-03

Received: 2012-10-18

Revision Accepted: 2013-01-14

Crosschecked: 2013-03-15

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Journal of Zhejiang University SCIENCE C 2013 Vol.14 No.4 P.235-243

http://doi.org/10.1631/jzus.C12MNT01


Electrical characterization of integrated passive devices using thin film technology for 3D integration


Author(s):  Xin Sun, Yun-hui Zhu, Zhen-hua Liu, Qing-hu Cui, Sheng-lin Ma, Jing Chen, Min Miao, Yu-feng Jin

Affiliation(s):  National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Peking University, Beijing 100871, China; more

Corresponding email(s):   sunxin@ime.pku.edu.cn, yfjin@pku.edu.cn

Key Words:  Integrated passive device (IPD), Benzocyclobutene (BCB), Thin flim, 3D Integration


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Xin Sun, Yun-hui Zhu, Zhen-hua Liu, Qing-hu Cui, Sheng-lin Ma, Jing Chen, Min Miao, Yu-feng Jin. Electrical characterization of integrated passive devices using thin film technology for 3D integration[J]. Journal of Zhejiang University Science C, 2013, 14(4): 235-243.

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journal="Journal of Zhejiang University Science C",
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publisher="Zhejiang University Press & Springer",
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Abstract: 
With the development of 3D Integration technology, microsystems with vertical interconnects are attracting attention from researchers and industry applications. Basic elements of integrated passive devices (IPDs), including inductors, capacitors, and resistors, could dramatically save the footprint of the system, optimize the form factor, and improve the performance of radio frequency (RF) systems. In this paper, IPDs using thin film built-up technology are introduced, and the design and characterization of coplanar waveguides (CPWs), inductors, and capacitors are presented.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

Reference

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