Full Text:   <231>

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CLC number: O436.4

On-line Access: 2019-05-14

Received: 2018-06-28

Revision Accepted: 2018-11-16

Crosschecked: 2019-04-11

Cited: 0

Clicked: 903

Citations:  Bibtex RefMan EndNote GB/T7714

 ORCID:

Xing-jun Wang

http://orcid.org/0000-0001-8206-2544

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Frontiers of Information Technology & Electronic Engineering  2019 Vol.20 No.4 P.458-471

http://doi.org/10.1631/FITEE.1800407


Graphene-based silicon modulators


Author(s):  Hao-wen Shu, Ming Jin, Yuan-sheng Tao, Xing-jun Wang

Affiliation(s):  State Key Laboratory on Advanced Optical Communication Systems and Networks, Department of Electronics, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China; more

Corresponding email(s):   haowenshu@pku.edu.cn, mjin@pku.edu.cn, ystao@pku.edu.cn, xjwang@pku.edu.cn

Key Words:  Silicon photonics, Graphene, Optical modulator


Hao-wen Shu, Ming Jin, Yuan-sheng Tao, Xing-jun Wang. Graphene-based silicon modulators[J]. Frontiers of Information Technology & Electronic Engineering, 2019, 20(4): 458-471.

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Abstract: 
silicon photonics is a promising technology to address the demand for dense and integrated next-generation optical interconnections due to its complementary-metal-oxide-semiconductor (CMOS) compatibility. However, one of the key building blocks, the silicon modulator, suffers from several drawbacks, including a limited bandwidth, a relatively large footprint, and high power consumption. The graphene-based silicon modulator, which benefits from the excellent optical properties of the two-dimensional graphene material with its unique band structure, has significantly advanced the above critical figures of merit. In this work, we review the state-of-the-art graphene-based silicon modulators operating in various mechanisms, i.e., thermal-optical, electro-optical, and plasmonic. It is shown that graphene-based silicon modulators possess the potential to have satisfactory characteristics in intra- and inter-chip connections.

硅基石墨烯调制器

摘要:为满足下一代光互联技术高带宽、低功耗的需求,基于金属互补氧化物半导体(CMOS)工艺的硅基光电子技术有望实现光电器件大规模、高密度集成,在高速率数据传输方面带来新突破。硅基调制器是硅基光电子学的核心器件之一,然而传统基于等离子色散效应的硅基耗尽式调制器在带宽、尺寸和功耗方面存在一定限制,影响传输系统整体性能。为解决该问题,石墨烯被引入硅基光电子器件的材料体系,其优异的电学传输特性和光电特性有效提升传统硅基光调制器单元器件性能。我们总结了基于热光、电光、等离子体等硅基石墨烯调制器的最新进展,其出色性能使硅基石墨烯调制器有望成为下一代片上及片外光互连技术的候选方案。

关键词:硅基光电子学;石墨烯;光调制器

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

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