Full Text:   <51>

CLC number: 

On-line Access: 2021-02-22

Received: 2020-09-28

Revision Accepted: 2021-01-06

Crosschecked: 0000-00-00

Cited: 0

Clicked: 56

Citations:  Bibtex RefMan EndNote GB/T7714

-   Go to

Article info.
Open peer comments

Journal of Zhejiang University SCIENCE C 1998 Vol.-1 No.-1 P.

http://doi.org/10.1631/FITEE.2000510


A 9.8–30.1 GHz CMOS LNA with 3.2 dB NF using inductor-based and transformer-based gm-boosting techniques


Author(s):  Hongchen CHEN, Haoshen ZHU, Liang WU, Wenquan CHE, Quan XUE

Affiliation(s):  Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510641, China; more

Corresponding email(s):   hongdoublechen@gmail.com, zhuhs@scut.edu.cn, wuliang@cuhk.edu.cn, eewqche@scut.edu.cn, eeqxue@scut.edu.cn

Key Words:  CMOS, gm-boosting, Low noise amplifier (LNA), Transformer, Common gate (CG)


Hongchen CHEN, Haoshen ZHU, Liang WU, Wenquan CHE, Quan XUE. A 9.8–30.1 GHz CMOS LNA with 3.2 dB NF using inductor-based and transformer-based gm-boosting techniques[J]. Frontiers of Information Technology & Electronic Engineering, 1998, -1(-1): .

@article{title="A 9.8–30.1 GHz CMOS LNA with 3.2 dB NF using inductor-based and transformer-based gm-boosting techniques",
author="Hongchen CHEN, Haoshen ZHU, Liang WU, Wenquan CHE, Quan XUE",
journal="Frontiers of Information Technology & Electronic Engineering",
volume="-1",
number="-1",
pages="",
year="1998",
publisher="Zhejiang University Press & Springer",
doi="10.1631/FITEE.2000510"
}

%0 Journal Article
%T A 9.8–30.1 GHz CMOS LNA with 3.2 dB NF using inductor-based and transformer-based gm-boosting techniques
%A Hongchen CHEN
%A Haoshen ZHU
%A Liang WU
%A Wenquan CHE
%A Quan XUE
%J Journal of Zhejiang University SCIENCE C
%V -1
%N -1
%P
%@ 2095-9184
%D 1998
%I Zhejiang University Press & Springer
%DOI 10.1631/FITEE.2000510

TY - JOUR
T1 - A 9.8–30.1 GHz CMOS LNA with 3.2 dB NF using inductor-based and transformer-based gm-boosting techniques
A1 - Hongchen CHEN
A1 - Haoshen ZHU
A1 - Liang WU
A1 - Wenquan CHE
A1 - Quan XUE
J0 - Journal of Zhejiang University Science C
VL - -1
IS - -1
SP -
EP -
%@ 2095-9184
Y1 - 1998
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/FITEE.2000510


Abstract: 
A 9.8–30.1 GHz CMOS low noise amplifier (LNA) with 3.2-dB minimum noise figure (NF) is presented. At the architecture level, a topology based on common-gate (CG) cascading with a common-source (CS) amplifier is proposed for simultaneous wideband input matching and relatively high gain. At the circuit level, multiple techniques are proposed to improve LNA performance. First, in the CG stage, the loading effect is properly utilized instead of the conventional feedback technique, to enable simultaneous impedance and noise matching (SINM). Second, based on in-depth theoretical analysis, the inductor-based and transformer-based gm-boost techniques are employed for the CG and CS stages, respectively, to enhance the gain and reduce power consumption. Third, the floating-body method, which was originally proposed to lower the NF in CS amplifiers, is adopted in the CG stage to further reduce the NF. Fabricated in a 65-nm CMOS technology, the LNA chip occupies an area of only 0.2 mm2 and measures a maximum power gain of 10.9 dB with -3dB bandwidth from 9.8 to 30.1 GHz. The NF exhibits a minimum value of 3.2 dB at 15 GHz and is below 5.7 dB across the entire bandwidth. The LNA consumes 15.6 mW from a 1.2-V supply.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

Open peer comments: Debate/Discuss/Question/Opinion

<1>

Please provide your name, email address and a comment





Journal of Zhejiang University-SCIENCE, 38 Zheda Road, Hangzhou 310027, China
Tel: +86-571-87952783; E-mail: cjzhang@zju.edu.cn
Copyright © 2000 - Journal of Zhejiang University-SCIENCE