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Abstract: We demonstrate a low-noise, high-gain, and large-dynamic-range photodetector (PD) based on a junction field-effect transistor (JFET) and a charge amplifier for the measurement of quantum noise in bell-state detection (BSD). Particular photodiode junction capacitance allows the silicon N-channel JFET 2sk152 to be matched to the noise requirement for charge amplifier A250. The electronic noise of the PD is effectively suppressed and the signal-to-noise ratio (SNR) is up to 15 dB at the analysis frequency of 2.75 MHz for a coherent laser power of 50.08 μW. By combining of the inductor and capacitance, the alternating current (AC) and direct current (DC) branches of the PD can operate linearly in a dynamic range from 25.06 μW to 17.50 mW. The PD can completely meet the requirements of SNR and dynamic range for BSD in quantum optics experiments.

基于J型场效应管和电荷放大器的低噪声高增益大动态范围光电探测器

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