Abstract: The performance of complementary metal oxide semiconductor (CMOS) circuits is affected by electromagnetic interference (EMI), and the study of the circuit’s ability to resist EMI will facilitate the design of circuits with better performance. Current-mode CMOS circuits have been continuously developed in recent years due to their advantages of high speed and low power consumption over conventional circuits under the deep submicron process; their EMI resistance performance deserves further study. This paper introduces three kinds of NOT gate circuits: conventional voltage-mode CMOS, MOS current-mode logic (MCML) with voltage signal of input and output, and current-mode CMOS with current signal of input and output. The effects of EMI on three NOT gate circuits are investigated using Cadence Virtuoso software simulation, and a disturbance level factor is defined to compare the effects of different interference terminals, interference signals’ waveforms, and interference signals’ frequencies on the circuits in the 65 nm process. The relationship between input resistance and circuit EMI resistance performance is investigated by varying the value of cascade resistance at the input of the current-mode CMOS circuits. Simulation results show that the current-mode CMOS circuits have better resistance performance to EMI at high operating frequencies, and the higher the operating frequency of the current-mode CMOS circuits, the better the resistance performance of the circuits to EMI. Additionally, the effects of different temperatures and different processes on the resistance performance of three circuits are also studied. In the temperature range of -40 °C to 125 °C, the higher the temperature, the weaker the resistance ability of voltage-mode CMOS and MCML circuits, and the stronger the resistance ability of current-mode CMOS circuits. In the 28 nm process, the current-mode CMOS circuit interference resistance ability is relatively stronger than that of the other two kinds of circuits. The relative interference resistance ability of voltage-mode CMOS and MCML circuits in the 28 nm process is similar to that of the 65 nm process, while the relative interference resistance ability of current-mode CMOS circuits in the 28 nm process is stronger than that of the 65 nm process. This study provides a basis for the design of current-mode CMOS circuits against EMI.

三种CMOS反相器抗电磁干扰性能研究

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