CLC number: X511; TK09
On-line Access: 2024-08-27
Received: 2023-10-17
Revision Accepted: 2024-05-08
Crosschecked: 2017-12-15
Cited: 1
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Xue-liang Mu, Xiang Gao, Hai-tao Zhao, Michael George, Tao Wu. Density functional theory study of the adsorption of elemental mercury on a 1T-MoS2 monolayer[J]. Journal of Zhejiang University Science A,in press.Frontiers of Information Technology & Electronic Engineering,in press.https://doi.org/10.1631/jzus.A1700079 @article{title="Density functional theory study of the adsorption of elemental mercury on a 1T-MoS2 monolayer", %0 Journal Article TY - JOUR
关于单层1T-MoS2吸附元素汞的密度泛函理论研究方法:1. 采用密度泛函理论(DFT)分析Hg0在1T-MoS2单层上的吸附机理.2. 考察1T-MoS2的不同吸附位置.3. 对不同的吸附构型,研究电子吸附前后的变化,从而进一步了解吸附过程. 结论:1. 化学吸附是Hg原子与1T-MoS2单层吸附的主导因素.同时,在所有可能的吸附位置中,TMo(在钼原子上方)的位置是最强烈的吸附构型.2. 汞(Hg)原子在1T-MoS2单层上的吸附受邻近的硫(S)和钼(Mo)原子的影响.3. 吸附的汞(Hg)原子在1T-MoS2的TMo位置上会被氧化,其吸附能为−1.091 eV.4. 从局部态密度(PDOS)分析来看,Hg原子和1T-MoS2表面之间的相互作用是由汞(Hg)原子的d轨道与硫(S)原子的s轨道及钼(Mo)原子的p轨道和d轨道重叠所致. 关键词组: Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article
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