CLC number: TN389
On-line Access: 2024-08-27
Received: 2023-10-17
Revision Accepted: 2024-05-08
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LI Hong, RUAN Hang-yu. A MICROGAP SURGE ABSORBER FABRICATED USING CONVENTIONAL SEMICONDUCTOR TECHNOLOGY[J]. Journal of Zhejiang University Science A, 2001, 2(2): 174-178.
@article{title="A MICROGAP SURGE ABSORBER FABRICATED USING CONVENTIONAL SEMICONDUCTOR TECHNOLOGY",
author="LI Hong, RUAN Hang-yu",
journal="Journal of Zhejiang University Science A",
volume="2",
number="2",
pages="174-178",
year="2001",
publisher="Zhejiang University Press & Springer",
doi="10.1631/jzus.2001.0174"
}
%0 Journal Article
%T A MICROGAP SURGE ABSORBER FABRICATED USING CONVENTIONAL SEMICONDUCTOR TECHNOLOGY
%A LI Hong
%A RUAN Hang-yu
%J Journal of Zhejiang University SCIENCE A
%V 2
%N 2
%P 174-178
%@ 1869-1951
%D 2001
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.2001.0174
TY - JOUR
T1 - A MICROGAP SURGE ABSORBER FABRICATED USING CONVENTIONAL SEMICONDUCTOR TECHNOLOGY
A1 - LI Hong
A1 - RUAN Hang-yu
J0 - Journal of Zhejiang University Science A
VL - 2
IS - 2
SP - 174
EP - 178
%@ 1869-1951
Y1 - 2001
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.2001.0174
Abstract: A new type microgap surge absorber fabricated by only semiconductor technique has in it a special structure silicon chip which forms microgaps for gas discharge with electrodes, and has advantages such as small size, low cost, suitability for mass production besides the desirable characteristics that common microgap surge absorbers have. Applications of this absorber in communication facilities are discussed.
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[5] Tachibana, K., Okubo, S. and Oshige, T., 1980. The discharge of microgaps and their application to surge absorber(in Japanese). Trans. Inst. Elec. Eng. Japan, 100-A(3):169-176.
[6] Xu, X. J. And Zhu, D. C.,1996. Gas Discharge Physics, Fudan University Press, Shanghai, p.121-134.
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