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YANG Jia-shi, ZHOU Hong-gang. Interface waves between two piezoelectric half-spaces with a semiconductor film[J]. Journal of Zhejiang University Science A, 2005, 6(2): 90~96.

@article{title="Interface waves between two piezoelectric half-spaces with a semiconductor film",

author="YANG Jia-shi, ZHOU Hong-gang",

journal="Journal of Zhejiang University Science A",

volume="6",

number="2",

pages="90~96",

year="2005",

publisher="Zhejiang University Press & Springer",

doi="10.1631/jzus.2005.A0090"

}

%0 Journal Article

%T Interface waves between two piezoelectric half-spaces with a semiconductor film

%A YANG Jia-shi

%A ZHOU Hong-gang

%J Journal of Zhejiang University SCIENCE A

%V 6

%N 2

%P 90~96

%@ 1673-565X

%D 2005

%I Zhejiang University Press & Springer

%DOI 10.1631/jzus.2005.A0090

TY - JOUR

T1 - Interface waves between two piezoelectric half-spaces with a semiconductor film

A1 - YANG Jia-shi

A1 - ZHOU Hong-gang

J0 - Journal of Zhejiang University Science A

VL - 6

IS - 2

SP - 90

EP - 96

%@ 1673-565X

Y1 - 2005

PB - Zhejiang University Press & Springer

ER -

DOI - 10.1631/jzus.2005.A0090

**Abstract: **In this work propagation of anti-plane (SH) waves in two piezoelectric ceramic half-spaces with a thin layer of a semiconducting material between the half-spaces is studied, and wave attenuation and dispersion caused by semiconduction as well as wave amplification by a biasing electric field are examined.

**
**

. INTRODUCTION

. THREE-DIMENSIONAL EQUATIONS

With successive substitutions form Eqs.(

On the boundary of a finite body with a unit outward normal

. EQUATIONS FOR A THIN FILM

According to the compact matrix notation (Tiersten,

For convenience we introduce a convention that subscripts

Substitution of Eq.(

whose material constants are

We now introduce another convention that subscripts

Integrating the equations in Eq.(

. INTERFACE WAVES

The non-vanishing strain and electric field components are

The nontrivial components of the equations of motion and charge take the following form:

then

and

and

For continuity conditions, we need

Note that the continuity of

Consider the case when the dc biasing electric field is in the

Eq.(

Or, in terms of the wave speed

We observe from Eq.(

(i) As a special case, when

(ii) Different from the interface waves (Maerfeld and Tournois,

(iii) If the two half-spaces are of the same ceramics with opposite poling directions, we have (Maerfeld and Tournois,

Then Eq.(

Eq.(

(iv) If the two half-spaces are of the same ceramics with the same poling direction, Eq.(

The denominator of the right-hand side of Eq.(

i.e., the acoustic wave speed is equal to the carrier drift speed.

. NUMERICAL RESULTS

which determines

which suggests a wave that is both dispersive and dissipative.

For the ceramic half-spaces consider PZT-5H with

For silicon with

The mobility of electrons and holes of silicon at 300 °K are (Navon,

The diffusion constants can be determined from the Einstein relation (Navon,

We plot the real parts of

which may be considered as a normalized electric field. It represents the ratio of the electron drift velocity and the speed of the shear acoustic wave. Because of the use of the thin film equations for the semiconductor layer, our solutions are valid only when the wavelength is much larger than the film thickness (

Fig.

When the dc bias is large enough (approximately

. CONCLUSION

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Copyright © 2000 - Journal of Zhejiang University-SCIENCE

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