Full Text:   <956>

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CLC number: O33; TB1

On-line Access: 2016-01-06

Received: 2015-07-27

Revision Accepted: 2015-10-26

Crosschecked: 2015-12-11

Cited: 5

Clicked: 1361

Citations:  Bibtex RefMan EndNote GB/T7714

 ORCID:

Chun-li Zhang

http://orcid.org/0000-0002-6688-2785

Jia-shi Yang

http://orcid.org/0000-0003-3971-1240

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Journal of Zhejiang University SCIENCE A 2016 Vol.17 No.1 P.37-44

10.1631/jzus.A1500213


Carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod


Author(s):  Chun-li Zhang, Xiao-yuan Wang, Wei-qiu Chen, Jia-shi Yang

Affiliation(s):  1Department of Engineering Mechanics, Zhejiang University, Hangzhou 310027, China; more

Corresponding email(s):   jyang1@unl.edu

Key Words:  Piezoelectricity, Semiconductor, Rod, Carrier distribution


Chun-li Zhang, Xiao-yuan Wang, Wei-qiu Chen, Jia-shi Yang. Carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod[J]. Journal of Zhejiang University Science A, 2016, 17(1): 37-44.

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DOI - 10.1631/jzus.A1500213


Abstract: 
We made a theoretical study of the carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod of crystals of class 6 mm. Simple analytical expressions for the carrier distribution, electric potential, electric field, electric displacement, mechanical displacement, stress, and strain were obtained from a 1D nonlinear model reduced from the 3D equations for piezoelectric semiconductors. The distribution and fields were found to be either symmetric or antisymmetric about the center of the rod. They are qualitatively the same for electrons and holes. Numerical calculations show that the carrier distribution and the fields are relatively strong near the ends of the rod than in its central part. They are sensitive to the value of the carrier density near the ends of the rod.

The carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod has been investigated theoretically and numerically in present contribution. A theoretical solution has been given based on a one-dimensional model. Meanwhile, the carrier distribution and electromechanical fields are simulated qualitatively and quantitatively.I believe this is the first piece of theoretical work on the effect of carrier distribution in piezoelectric semiconductor rods.

压电半导体杆中的机械场、电场与载流子分布研究

目的:导出两端自由压电半导体杆在自平衡状态下内部的位移、电场和载流子的解析表达式,研究它们在杆内的分布规律。
方法:从三维压电半导体基本方程出发,以n-型半导体为例,导出考虑拉伸变形模式的一维模型方程。由平衡方程和电学高斯方程和平衡态下杆内电流为零的条件得到以电场为未知函数一阶非线性偏微分方程,再利用两端自由的边界条件解出位移、电场和载流子的分布函数。
结论:压电半导体杆内位移、载流子和电势关于杆的几何中心对称分布,电场、应变则关于中心呈反对称分布形式;它们在半导体两端部的区域变化比在中心区域的变化剧烈。此外,半导体杆两端部的载流子浓度、位移和电场显著依赖于端部的初始载流子浓度。

关键词:力电耦合;半导体;杆;载流子

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

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