CLC number: TN47
On-line Access: 2011-05-09
Received: 2010-06-24
Revision Accepted: 2010-09-26
Crosschecked: 2011-03-31
Cited: 4
Clicked: 9074
Bin Lin, Xiao-lang Yan, Zheng Shi, Yi-wei Yang. A sparse matrix model-based optical proximity correction algorithm with model-based mapping between segments and control sites[J]. Journal of Zhejiang University Science C, 2011, 12(5): 436-442.
@article{title="A sparse matrix model-based optical proximity correction algorithm with model-based mapping between segments and control sites",
author="Bin Lin, Xiao-lang Yan, Zheng Shi, Yi-wei Yang",
journal="Journal of Zhejiang University Science C",
volume="12",
number="5",
pages="436-442",
year="2011",
publisher="Zhejiang University Press & Springer",
doi="10.1631/jzus.C1000219"
}
%0 Journal Article
%T A sparse matrix model-based optical proximity correction algorithm with model-based mapping between segments and control sites
%A Bin Lin
%A Xiao-lang Yan
%A Zheng Shi
%A Yi-wei Yang
%J Journal of Zhejiang University SCIENCE C
%V 12
%N 5
%P 436-442
%@ 1869-1951
%D 2011
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.C1000219
TY - JOUR
T1 - A sparse matrix model-based optical proximity correction algorithm with model-based mapping between segments and control sites
A1 - Bin Lin
A1 - Xiao-lang Yan
A1 - Zheng Shi
A1 - Yi-wei Yang
J0 - Journal of Zhejiang University Science C
VL - 12
IS - 5
SP - 436
EP - 442
%@ 1869-1951
Y1 - 2011
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.C1000219
Abstract: optical proximity correction (OPC) is a key step in modern integrated circuit (IC) manufacturing. The quality of model-based OPC (MB-OPC) is directly determined by segment offsets after OPC processing. However, in conventional MB-OPC, the intensity of a control site is adjusted only by the movement of its corresponding segment; this scheme is no longer accurate enough as the lithography process advances. On the other hand, matrix MB-OPC is too time-consuming to become practical. In this paper, we propose a new sparse matrix MB-OPC algorithm with model-based mapping between segments and control sites. We put forward the concept of ‘sensitive area’. When the Jacobian matrix used in the matrix MB-OPC is evaluated, only the elements that correspond to the segments in the sensitive area of every control site need to be calculated, while the others can be set to 0. The new algorithm can effectively improve the sparsity of the Jacobian matrix, and hence reduce the computations. Both theoretical analysis and experiments show that the sparse matrix MB-OPC with model-based mapping is more accurate than conventional MB-OPC, and much faster than matrix MB-OPC while maintaining high accuracy.
[1]Chen, Y., Wu, K., Shi, Z., Yan, X.L., 2007. A feasible model-based OPC algorithm using Jacobian matrix of intensity distribution functions. SPIE, 6520:65204C1-65204C10.
[2]Choi, S.H., Je, A.Y., Hong, J.S., Yoo, M.H., Kong, J.T., 2006. Meef-based correction to achieve OPC convergence of low-k1 lithography with strong OAI. SPIE, 6154:61540P-1-61540P-9.
[3]Cobb, N.B., Granik, Y., 2002. Model-based OPC using the meef matrix. SPIE, 4889:1281-1292.
[4]Cobb, N.B., Zakhor, A., 1995. Fast sparse aerial image calculation for OPC. SPIE, 2621:534-545.
[5]Cobb, N.B., Zakhor, A., Miloslavsky, E., 1996. Mathematical and CAD framework for proximity correction. SPIE, 2726:208-222.
[6]Granik, Y., 2005. Generalized mask error enhancement factor theory. J. Microlithogr. Microfabr. Microsyst., 4(2):023001-1-023001-10.
[7]Herold, K., Chen, N., Stobert, I.P., 2006. Managing high-accuracy and fast convergence in OPC. SPIE, 6349:634924-1-634924-8.
[8]Hopkins, H.H., 1953. On the diffraction theory of optical images. Proc. R. Soc. A, 217(1130):408-432.
[9]Painter, B., Melvin, L.S.III, Rieger, M.L., 2004. Classical control theory applied to OPC correction segment convergence. SPIE, 5377:1198-1206.
[10]Schellenberg, F.M., 2004. Resolution enhancement technology: the past, the present, and extensions for the future. SPIE, 5377:1-20.
[11]Schellenberg, F.M., Boksha, V., Cobb, N., Lai, J.C., Chen, C.H., Mack, C., 1999. Impact of mask errors on full chip error budgets. SPIE, 3679:261-272.
[12]Terasawa, T., 2000. Subwavelength optical lithography. SPIE, 4181:8-16.
[13]van Schoot, J., Finders, J., Schenau, K.V.I., Klaassen, M., Buijk, C., 1999. Mask error factor: causes and implications for process latitude. SPIE, 3679:250-260.
[14]Weeks, R.Jr., 2001. Resolution Enhancement Techniques. SPIE Press, Bellingham, Washington, USA, p.18-30.
[15]Word, J., Torres, A., Lacour, P., 2005. Advanced layout fragmentation and simulation schemes for model based OPC. SPIE, 5754:1159-1168.
[16]Yu, P., Pan, D.Z., 2007a. TIP-OPC: a New Topological Invariant Paradigm for Pixel Based Optical Proximity Correction. Proc. IEEE/ACM Int. Conf. on Computer-Aided Design, p.847-853.
[17]Yu, P., Pan, D.Z., 2007b. A Novel Intensity Based OPC Algorithm with Speedup in Lithography Simulation. Proc. IEEE/ACM Int. Conf. on Computer-Aided Design, p.854-859.
[18]Yu, P., Shi, S.X., Pan, D.Z., 2007. True process variation aware optical proximity correction with variational lithography modeling and model calibration. J. Microlithogr. Microfabr. Microsyst., 6(3):031004.
Open peer comments: Debate/Discuss/Question/Opinion
<1>