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CLC number: TN304.12

On-line Access: 2024-08-27

Received: 2023-10-17

Revision Accepted: 2024-05-08

Crosschecked: 2009-08-14

Cited: 7

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Journal of Zhejiang University SCIENCE A 2009 Vol.10 No.10 P.1413-1420

http://doi.org/10.1631/jzus.A0820757


An in-plane low-noise accelerometer fabricated with an improved process flow


Author(s):  Xu-dong ZHENG, Zhong-he JIN, Yue-lin WANG, Wei-jun LIN, Xiao-qi ZHOU

Affiliation(s):  Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China

Corresponding email(s):   brucezen@gmail.com, jinzh@zju.edu.cn

Key Words:  MEMS accelerometer, Deep reactive ion etching (DRIE), Footing effect, Capacitive sensing


Xu-dong ZHENG, Zhong-he JIN, Yue-lin WANG, Wei-jun LIN, Xiao-qi ZHOU. An in-plane low-noise accelerometer fabricated with an improved process flow[J]. Journal of Zhejiang University Science A, 2009, 10(10): 1413-1420.

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author="Xu-dong ZHENG, Zhong-he JIN, Yue-lin WANG, Wei-jun LIN, Xiao-qi ZHOU",
journal="Journal of Zhejiang University Science A",
volume="10",
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publisher="Zhejiang University Press & Springer",
doi="10.1631/jzus.A0820757"
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%T An in-plane low-noise accelerometer fabricated with an improved process flow
%A Xu-dong ZHENG
%A Zhong-he JIN
%A Yue-lin WANG
%A Wei-jun LIN
%A Xiao-qi ZHOU
%J Journal of Zhejiang University SCIENCE A
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%@ 1673-565X
%D 2009
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.A0820757

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T1 - An in-plane low-noise accelerometer fabricated with an improved process flow
A1 - Xu-dong ZHENG
A1 - Zhong-he JIN
A1 - Yue-lin WANG
A1 - Wei-jun LIN
A1 - Xiao-qi ZHOU
J0 - Journal of Zhejiang University Science A
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SP - 1413
EP - 1420
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PB - Zhejiang University Press & Springer
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DOI - 10.1631/jzus.A0820757


Abstract: 
We present a bulk micromachined in-plane capacitive accelerometer fabricated with an improved process flow, by etching only one-fifth of the wafer thickness at the back of the silicon while forming the bar-structure electrode for the sensing capacitor. The improved flow greatly lowers the footing effect during deep reactive ion etching (DRIE), and increases the proof mass by 54% compared to the traditional way, resulting in both improved device quality and a higher yield rate. Acceleration in the X direction is sensed capacitively by varying the overlapped area of a differential capacitor pair, which eliminates the nonlinear behavior by fixing the parallel-plate gap. The damping coefficient of the sensing motion is low due to the slide-film damping. A large proof mass is made using DRIE, which also ensures that dimensions of the spring beams in the Y and Z directions can be made large to lower cross axis coupling and increase the pull-in voltage. The theoretical Brownian noise floor is 0.47 μg/Hz1/2 at room temperature and atmospheric pressure. The tested frequency response of a prototype complies with the low damping design scheme. Output data for input acceleration from −1 g to 1 g are recorded by a digital multimeter and show very good linearity. The tested random bias of the prototype is 130 μg at an averaging time of around 6 s.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

Reference

[1] Boser, B.E., Howe, R.T., 1996. Surface micromachined accelerometers. IEEE J. Solid-State Circuits, 31(3):366-375.

[2] Bustillo, J.M., Howe, R.T., Muller, R.S., 1998. Surface micromachining for microelectromechanical systems. Proc. IEEE, 86(8):1552-1574.

[3] Chae, J., Kulah, H., Najafi, K., 2004. An in-plane high-sensitivity, low-noise micro-g silicon accelerometer with CMOS readout circuitry. J. Microelectromech. Syst., 13(4):628-635.

[4] Chen, Y., Jiao, J., Dong, L., Xiong, B., Che, L., Li, X., Wang, Y., 2003. Micromachined bar-structure gyroscope with high Q-factors for both driving and sensing mode at atmospheric pressure. Sensors, Proc. IEEE, 1:461-465.

[5] Cho, Y.H., Pisano, A.P., Howe, R.T., 1994. Visous damping model for laterally oscillating microstructures. J. Microelectromech. Syst., 3(2):81-87.

[6] Ishihara, K., Yung, C.F., Ayon, A.A., Schmidt, M.A., 1999. Inertial sensor technology using DRIE and wafer bonding with interconnecting capability. J. Microelectromech. Syst., 8(4):403-408.

[7] Jiang, X., Wang, F., Kraft, M., Boser, B.E., 2002. An Integrated Surface Micromachined Capacitive Lateral Accelerometer with 2 μG/√Hz Resolution. Solid-State Sensor, Actuator and Microsystems Workshop, p.202-205.

[8] Kovacs, G.T.A., Maluf, N.I., Petersen, K.E., 1998. Bulk micromachining of silicon. Proc. IEEE, 86(8):1536-1551.

[9] Wang, Y., Guo, Y., Zhang, H., 2007. Modeling and Simulation of Footing Effect in DRIE Process. Proc. 7th IEEE Int. Conf. on Nanotechnology, p.1135-1138.

[10] Weigold, J.W., Najafi, K., Pang, S.W., 2001. Design and fabrication of submicrometer, single crystal Si accelerometer. J. Microelectromech. Syst., 10(4):518-524.

[11] Yazdi, N., Najafi, K., 1997. An All-silicon Single-wafer Fabrication Technology for Precision Microaccelerometers. Proc. Int. Conf. on Solid-State Sensors and Actuators, p.1181-1184.

[12] Zheng, X., Cao, X., Zheng, Y., Luo, S., Wang, Y., Jin, Z., 2008. Study of a novel micromachined capacitive accelerometer. Chin. J. Sens. Actuat., 21(2):226-229 (in Chinese).

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