CLC number: O415
On-line Access: 2020-01-13
Received: 2019-07-19
Revision Accepted: 2019-10-20
Crosschecked: 2019-12-03
Cited: 0
Clicked: 4916
Citations: Bibtex RefMan EndNote GB/T7714
Mo Chen, Xue Ren, Hua-gan Wu, Quan Xu, Bo-cheng Bao. Periodically varied initial offset boosting behaviors in a memristive system with cosine memductance[J]. Frontiers of Information Technology & Electronic Engineering, 2019, 20(12): 1706-1716.
@article{title="Periodically varied initial offset boosting behaviors in a memristive system with cosine memductance",
author="Mo Chen, Xue Ren, Hua-gan Wu, Quan Xu, Bo-cheng Bao",
journal="Frontiers of Information Technology & Electronic Engineering",
volume="20",
number="12",
pages="1706-1716",
year="2019",
publisher="Zhejiang University Press & Springer",
doi="10.1631/FITEE.1900360"
}
%0 Journal Article
%T Periodically varied initial offset boosting behaviors in a memristive system with cosine memductance
%A Mo Chen
%A Xue Ren
%A Hua-gan Wu
%A Quan Xu
%A Bo-cheng Bao
%J Frontiers of Information Technology & Electronic Engineering
%V 20
%N 12
%P 1706-1716
%@ 2095-9184
%D 2019
%I Zhejiang University Press & Springer
%DOI 10.1631/FITEE.1900360
TY - JOUR
T1 - Periodically varied initial offset boosting behaviors in a memristive system with cosine memductance
A1 - Mo Chen
A1 - Xue Ren
A1 - Hua-gan Wu
A1 - Quan Xu
A1 - Bo-cheng Bao
J0 - Frontiers of Information Technology & Electronic Engineering
VL - 20
IS - 12
SP - 1706
EP - 1716
%@ 2095-9184
Y1 - 2019
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/FITEE.1900360
Abstract: A four-dimensional memristive system is constructed using a novel ideal memristor with cosine memductance. Due to the special memductance nonlinearity, this memristive system has a line equilibrium set (0, 0, 0, δ) located along the coordinate of the inner state variable of the memristor, whose stability is periodically varied with a change of δ. Nonlinear and one-dimensional initial offset boosting behaviors, which are triggered by not only the initial condition of the memristor but also other two initial conditions, are numerically uncovered. Specifically, a wide variety of coexisting attractors with different positions and topological structures are revealed along the boosting route. Finally, circuit simulations are performed by Power SIMulation (PSIM) to confirm the unique dynamical features.
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