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On-line Access: 2020-01-13

Received: 2019-07-19

Revision Accepted: 2019-10-20

Crosschecked: 2019-12-03

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Citations:  Bibtex RefMan EndNote GB/T7714


Mo Chen


Bo-cheng Bao


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Frontiers of Information Technology & Electronic Engineering  2019 Vol.20 No.12 P.1706-1716


Periodically varied initial offset boosting behaviors in a memristive system with cosine memductance

Author(s):  Mo Chen, Xue Ren, Hua-gan Wu, Quan Xu, Bo-cheng Bao

Affiliation(s):  School of Information Science and Engineering, Changzhou University, Changzhou 213164, China

Corresponding email(s):   mchen@cczu.edu.cn, mervinbao@126.com

Key Words:  Initial offset boosting, Memristive system, Memductance, Line equilibrium set

Mo Chen, Xue Ren, Hua-gan Wu, Quan Xu, Bo-cheng Bao. Periodically varied initial offset boosting behaviors in a memristive system with cosine memductance[J]. Frontiers of Information Technology & Electronic Engineering, 2019, 20(12): 1706-1716.

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publisher="Zhejiang University Press & Springer",

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%T Periodically varied initial offset boosting behaviors in a memristive system with cosine memductance
%A Mo Chen
%A Xue Ren
%A Hua-gan Wu
%A Quan Xu
%A Bo-cheng Bao
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%DOI 10.1631/FITEE.1900360

T1 - Periodically varied initial offset boosting behaviors in a memristive system with cosine memductance
A1 - Mo Chen
A1 - Xue Ren
A1 - Hua-gan Wu
A1 - Quan Xu
A1 - Bo-cheng Bao
J0 - Frontiers of Information Technology & Electronic Engineering
VL - 20
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PB - Zhejiang University Press & Springer
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DOI - 10.1631/FITEE.1900360

A four-dimensional memristive system is constructed using a novel ideal memristor with cosine memductance. Due to the special memductance nonlinearity, this memristive system has a line equilibrium set (0, 0, 0, δ) located along the coordinate of the inner state variable of the memristor, whose stability is periodically varied with a change of δ. Nonlinear and one-dimensional initial offset boosting behaviors, which are triggered by not only the initial condition of the memristor but also other two initial conditions, are numerically uncovered. Specifically, a wide variety of coexisting attractors with different positions and topological structures are revealed along the boosting route. Finally, circuit simulations are performed by Power SIMulation (PSIM) to confirm the unique dynamical features.


摘要:利用一种新型余弦忆导理想忆阻,构造一个四维忆阻系统。由于忆导函数特殊的非线性,忆阻系统具有沿忆阻内部状态变量坐标轴分布的线平衡点集(0, 0, 0, δ),且平衡点集稳定性随δ变化而周期性演化。数值仿真揭示了忆阻系统非线性、一维的初值位移调控行为,它不仅可由忆阻状态初值触发,也可由其他两个系统状态初值引发。特别地,在位移调控路线上,可以观测到多种具有不同位置和拓扑结构的共存吸引子。通过PSIM电路仿真对该特殊动力学特性进行了验证。


Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article


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