CLC number: TN304
On-line Access: 2024-08-27
Received: 2023-10-17
Revision Accepted: 2024-05-08
Crosschecked: 2021-09-02
Cited: 0
Clicked: 6582
Citations: Bibtex RefMan EndNote GB/T7714
Fabi Zhang, Jinyu Sun, Haiou Li, Juan Zhou, Rong Wang, Tangyou Sun, Tao Fu, Gongli Xiao, Qi Li, Xingpeng Liu, Xiuyun Zhang, Daoyou Guo, Xianghu Wang, Zujun Qin. Band-gap tunable (GaxIn1−x)2O3 layer grown by magnetron sputtering[J]. Frontiers of Information Technology & Electronic Engineering, 2021, 22(10): 1370-1378.
@article{title="Band-gap tunable (GaxIn1−x)2O3 layer grown by magnetron sputtering",
author="Fabi Zhang, Jinyu Sun, Haiou Li, Juan Zhou, Rong Wang, Tangyou Sun, Tao Fu, Gongli Xiao, Qi Li, Xingpeng Liu, Xiuyun Zhang, Daoyou Guo, Xianghu Wang, Zujun Qin",
journal="Frontiers of Information Technology & Electronic Engineering",
volume="22",
number="10",
pages="1370-1378",
year="2021",
publisher="Zhejiang University Press & Springer",
doi="10.1631/FITEE.2000330"
}
%0 Journal Article
%T Band-gap tunable (GaxIn1−x)2O3 layer grown by magnetron sputtering
%A Fabi Zhang
%A Jinyu Sun
%A Haiou Li
%A Juan Zhou
%A Rong Wang
%A Tangyou Sun
%A Tao Fu
%A Gongli Xiao
%A Qi Li
%A Xingpeng Liu
%A Xiuyun Zhang
%A Daoyou Guo
%A Xianghu Wang
%A Zujun Qin
%J Frontiers of Information Technology & Electronic Engineering
%V 22
%N 10
%P 1370-1378
%@ 2095-9184
%D 2021
%I Zhejiang University Press & Springer
%DOI 10.1631/FITEE.2000330
TY - JOUR
T1 - Band-gap tunable (GaxIn1−x)2O3 layer grown by magnetron sputtering
A1 - Fabi Zhang
A1 - Jinyu Sun
A1 - Haiou Li
A1 - Juan Zhou
A1 - Rong Wang
A1 - Tangyou Sun
A1 - Tao Fu
A1 - Gongli Xiao
A1 - Qi Li
A1 - Xingpeng Liu
A1 - Xiuyun Zhang
A1 - Daoyou Guo
A1 - Xianghu Wang
A1 - Zujun Qin
J0 - Frontiers of Information Technology & Electronic Engineering
VL - 22
IS - 10
SP - 1370
EP - 1378
%@ 2095-9184
Y1 - 2021
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/FITEE.2000330
Abstract: Multicomponent oxide (GaxIn1−x)2O3 films are prepared on (0001) sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing. The optical properties and band structure evolution over the whole range of compositions in ternary compounds (GaxIn1−x)2O3 are investigated in detail. The X-ray diffraction spectra clearly indicate that (GaxIn1−x)2O3 films with Ga content varying from 0.11 to 0.55 have both cubic and monoclinic structures, and that for films with Ga content higher than 0.74, only the monoclinic structure appears. The transmittance of all films is greater than 86% in the visible range with sharp absorption edges and clear fringes. In addition, a blue shift of ultraviolet absorption edges from 380 to 250 nm is noted with increasing Ga content, indicating increasing band-gap energy from 3.61 to 4.64 eV. The experimental results lay a foundation for the application of transparent conductive compound (GaxIn1−x)2O3 thin films in photoelectric and photovoltaic industry, especially in display, light-emitting diode, and solar cell applications.
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