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CLC number: TN4; TN6; TN710
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Received: 2007-09-28
Revision Accepted: 2007-11-04
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A robust polysilicon-assisted SCR in ESD protection application
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CUI Qiang, HAN Yan, DONG Shu-rong, LIOU Juin-jie. A robust polysilicon-assisted SCR in ESD protection application[J]. Journal of Zhejiang University Science A, 2007, 8(12): 1879-1883.
@article{title="A robust polysilicon-assisted SCR in ESD protection application",
author="CUI Qiang, HAN Yan, DONG Shu-rong, LIOU Juin-jie",
journal="Journal of Zhejiang University Science A",
volume="8",
number="12",
pages="1879-1883",
year="2007",
publisher="Zhejiang University Press & Springer",
doi="10.1631/jzus.2007.A1879"
}
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%A CUI Qiang
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%A DONG Shu-rong
%A LIOU Juin-jie
%J Journal of Zhejiang University SCIENCE A
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%@ 1673-565X
%D 2007
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.2007.A1879
TY - JOUR
T1 - A robust polysilicon-assisted SCR in ESD protection application
A1 - CUI Qiang
A1 - HAN Yan
A1 - DONG Shu-rong
A1 - LIOU Juin-jie
J0 - Journal of Zhejiang University Science A
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IS - 12
SP - 1879
EP - 1883
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Y1 - 2007
PB - Zhejiang University Press & Springer
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DOI - 10.1631/jzus.2007.A1879
Abstract: A novel polysilicon-assisted silicon-controlled rectifier (SCR) is presented and analyzed in this paper, which is fabricated in HHNEC’s 0.18 μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help bypass electro-static discharge (ESD) current without occupying extra layout area. TLP current-voltage (I-V) measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of conventional MLSCR’s. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 μm2 layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. Compared with traditional SCRs, this new SCR can bypass more ESD currents and consumes smaller IC area.
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