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Received: 2007-09-28

Revision Accepted: 2007-11-04

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Journal of Zhejiang University SCIENCE A 2007 Vol.8 No.12 P.1879~1883

10.1631/jzus.2007.A1879


A robust polysilicon-assisted SCR in ESD protection application


Author(s):  CUI Qiang, HAN Yan, DONG Shu-rong, LIOU Juin-jie

Affiliation(s):  ESD Lab, Institute of Microelectronics and Photoelectronics, Zhejiang University, Hangzhou 310027, China; more

Corresponding email(s):   hany@zju.edu.cn

Key Words:  Electro-static discharge (ESD), Silicon-controlled rectifier (SCR), Robustness performance, Polysilicon-assisted, Human body model (HBM)


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CUI Qiang, HAN Yan, DONG Shu-rong, LIOU Juin-jie. A robust polysilicon-assisted SCR in ESD protection application[J]. Journal of Zhejiang University Science A, 2007, 8(1): 1879~1883.

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publisher="Zhejiang University Press & Springer",
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Abstract: 
A novel polysilicon-assisted silicon-controlled rectifier (SCR) is presented and analyzed in this paper, which is fabricated in HHNEC’s 0.18 μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help bypass electro-static discharge (ESD) current without occupying extra layout area. TLP current-voltage (I-V) measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of conventional MLSCR’s. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 μm2 layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. Compared with traditional SCRs, this new SCR can bypass more ESD currents and consumes smaller IC area.

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Reference

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[6] Si Moussa, M., El Kaamouchi, M., Wybo, G., Bens, A., Raskin, J.P., Vanhoenacker-Janvier, D., 2007. Design of a Distributed Amplifier with On-chip ESD Protection Circuit in 130 nm SOI CMOS Technology. Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, p.111-114.

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