CLC number:
On-line Access: 2022-01-24
Received: 2020-09-27
Revision Accepted: 2022-04-22
Crosschecked: 2021-01-07
Cited: 0
Clicked: 6208
Citations: Bibtex RefMan EndNote GB/T7714
https://orcid.org/0000-0003-0363-3412
Yang WANG, Xiangliang JIN, Jian YANG, Feng YAN, Yujie LIU, Yan PENG, Jun LUO, Jun YANG. Design and optimization of a gate-controlled dual direction electro-static discharge device for an industry-level fluorescent optical fiber temperature sensor[J]. Frontiers of Information Technology & Electronic Engineering, 2022, 23(1): 158-170.
@article{title="Design and optimization of a gate-controlled dual direction electro-static discharge device for an industry-level fluorescent optical fiber temperature sensor",
author="Yang WANG, Xiangliang JIN, Jian YANG, Feng YAN, Yujie LIU, Yan PENG, Jun LUO, Jun YANG",
journal="Frontiers of Information Technology & Electronic Engineering",
volume="23",
number="1",
pages="158-170",
year="2022",
publisher="Zhejiang University Press & Springer",
doi="10.1631/FITEE.2000504"
}
%0 Journal Article
%T Design and optimization of a gate-controlled dual direction electro-static discharge device for an industry-level fluorescent optical fiber temperature sensor
%A Yang WANG
%A Xiangliang JIN
%A Jian YANG
%A Feng YAN
%A Yujie LIU
%A Yan PENG
%A Jun LUO
%A Jun YANG
%J Frontiers of Information Technology & Electronic Engineering
%V 23
%N 1
%P 158-170
%@ 2095-9184
%D 2022
%I Zhejiang University Press & Springer
%DOI 10.1631/FITEE.2000504
TY - JOUR
T1 - Design and optimization of a gate-controlled dual direction electro-static discharge device for an industry-level fluorescent optical fiber temperature sensor
A1 - Yang WANG
A1 - Xiangliang JIN
A1 - Jian YANG
A1 - Feng YAN
A1 - Yujie LIU
A1 - Yan PENG
A1 - Jun LUO
A1 - Jun YANG
J0 - Frontiers of Information Technology & Electronic Engineering
VL - 23
IS - 1
SP - 158
EP - 170
%@ 2095-9184
Y1 - 2022
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/FITEE.2000504
Abstract: The input/output (I/O) pins of an industry-level fluorescent optical fiber temperature sensor readout circuit need on-chip integrated high-performance electro-static discharge (ESD) protection devices. It is difficult for the failure level of basic N-type buried layer gate-controlled silicon controlled rectifier (NBL-GCSCR) manufactured by the 0.18 μm standard bipolar- CMOS-DMOS (BCD) process to meet this need. Therefore, we propose an on-chip integrated novel deep N-well gate-controlled SCR (DNW-GCSCR) with a high failure level to effectively solve the problems based on the same semiconductor process. Technology computer-aided design (TCAD) simulation is used to analyze the device characteristics. SCRs are tested by transmission line pulses (TLP) to obtain accurate ESD parameters. The holding voltage (24.03 V) of NBL-GCSCR with the longitudinal bipolar junction transistor (BJT) path is significantly higher than the holding voltage (5.15 V) of DNW-GCSCR with the lateral SCR path of the same size. However, the failure current of the NBL-GCSCR device is 1.71 A, and the failure current of the DNW-GCSCR device is 20.99 A. When the gate size of DNW-GCSCR is increased from 2 μm to 6 μm, the holding voltage is increased from 3.50 V to 8.38 V. The optimized DNW-GCSCR (6 μm) can be stably applied on target readout circuits for on-chip electrostatic discharge protection.
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