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CLC number: TN324; TN301.1

On-line Access: 2011-07-04

Received: 2010-09-09

Revision Accepted: 2011-01-10

Crosschecked: 2011-05-31

Cited: 4

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Journal of Zhejiang University SCIENCE C 2011 Vol.12 No.7 P.597-603

http://doi.org/10.1631/jzus.C1000312


Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias


Author(s):  Yong Ding, Xiao-hua Luo, Xiao-lang Yan

Affiliation(s):  Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China

Corresponding email(s):   dingy@vlsi.zju.edu.cn, luoxh@vlsi.zju.edu.cn

Key Words:  Low-frequency noises (LFN), Effective substrate resistivity, Channel-substrate junction, Sidegating bias


Yong Ding, Xiao-hua Luo, Xiao-lang Yan. Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias[J]. Journal of Zhejiang University Science C, 2011, 12(7): 597-603.

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%A Xiao-hua Luo
%A Xiao-lang Yan
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%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.C1000312

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PB - Zhejiang University Press & Springer
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DOI - 10.1631/jzus.C1000312


Abstract: 
low-frequency noises (LFN) and noise-like oscillations (NLO) in GaAs metal semiconductor field effect transistor (MESFET) channel current were investigated under sidegating bias conditions. It was found that the fluctuations of the channel current were directly dependent upon the sidegating bias. As the sidegating bias decreased, the amplitudes of the oscillations would increase correspondingly. Furthermore, the LFN and NLO would attenuate sharply when the sidegating bias increased to more than a certain voltage. Two mechanisms are presented to demonstrate that the effective substrate resistivity or the channel-substrate junction modulated by sidegating bias and deep level traps would take responsibilities for the LFN and NLO.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

Reference

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