Full Text:   <3718>

CLC number: TN324; TN301.1

On-line Access: 2011-07-04

Received: 2010-09-09

Revision Accepted: 2011-01-10

Crosschecked: 2011-05-31

Cited: 4

Clicked: 7395

Citations:  Bibtex RefMan EndNote GB/T7714

-   Go to

Article info.
1. Reference List
Open peer comments

Journal of Zhejiang University SCIENCE C 2011 Vol.12 No.7 P.597-603


Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias

Author(s):  Yong Ding, Xiao-hua Luo, Xiao-lang Yan

Affiliation(s):  Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China

Corresponding email(s):   dingy@vlsi.zju.edu.cn, luoxh@vlsi.zju.edu.cn

Key Words:  Low-frequency noises (LFN), Effective substrate resistivity, Channel-substrate junction, Sidegating bias

Yong Ding, Xiao-hua Luo, Xiao-lang Yan. Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias[J]. Journal of Zhejiang University Science C, 2011, 12(7): 597-603.

@article{title="Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias",
author="Yong Ding, Xiao-hua Luo, Xiao-lang Yan",
journal="Journal of Zhejiang University Science C",
publisher="Zhejiang University Press & Springer",

%0 Journal Article
%T Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias
%A Yong Ding
%A Xiao-hua Luo
%A Xiao-lang Yan
%J Journal of Zhejiang University SCIENCE C
%V 12
%N 7
%P 597-603
%@ 1869-1951
%D 2011
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.C1000312

T1 - Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias
A1 - Yong Ding
A1 - Xiao-hua Luo
A1 - Xiao-lang Yan
J0 - Journal of Zhejiang University Science C
VL - 12
IS - 7
SP - 597
EP - 603
%@ 1869-1951
Y1 - 2011
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.C1000312

low-frequency noises (LFN) and noise-like oscillations (NLO) in GaAs metal semiconductor field effect transistor (MESFET) channel current were investigated under sidegating bias conditions. It was found that the fluctuations of the channel current were directly dependent upon the sidegating bias. As the sidegating bias decreased, the amplitudes of the oscillations would increase correspondingly. Furthermore, the LFN and NLO would attenuate sharply when the sidegating bias increased to more than a certain voltage. Two mechanisms are presented to demonstrate that the effective substrate resistivity or the channel-substrate junction modulated by sidegating bias and deep level traps would take responsibilities for the LFN and NLO.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article


[1]Birbas, A.N., Brunn, B., van Rheenen, A.D., Gopinath, A., Chen, C.L., Smith, F., 1991. Low-frequency noise in GaAs MESFETs related to backgating effects. IEE Proc. G Circ. Dev. Syst., 138(2):175-178.

[2]Chiu, H.C., Wei, C.C., Cheng, C.S., Wu, Y.F., 2008. Phase-noise improvement of GaAs pHEMT k-band voltage-controlled oscillator using tunable field-plate voltage technology. IEEE Electron Dev. Lett., 29(5):426-429.

[3]Ding, Y., Lu, S.L., Zhao, F.C., 2005. Modulation of low-frequency oscillations in GaAs MESFETs’ channel current by sidegating bias. Chin. Sci. Bull., 50(9):932-935.

[4]Dobrzański, L., Wolosiak, Z., 2000. On the origin of low frequency noise in GaAs metal–semiconductor field-effect transistors. J. Appl. Phys., 87(1):517-521.

[5]Gorev, N.B., Kodzhespirova, I.F., Privalov, E.N., Khuchua, N., Khvedelidze, I., Shur, M.S., 2007. Photocapacitance of selectively doped AlGaAs/GaAs heterostructures containing deep traps. Int. J. High Speed Electron. Syst., 17(1):189-192.

[6]Horio, K., Yanai, H., Ikoma, T., 1988. Numerical simulation of GaAs MESFET’s on the semi-insulating substrate compensated by deep traps. IEEE Tran. Electron Dev., 35(11):1778-1785.

[7]Izpura, J.I., 2007. 1/f electrical noise due to space charge regions. J. Eur. Ceram. Soc., 27(13-15):4011-4015.

[8]Izpura, J.I., 2008. 1/f electrical noise in planar resistors: the joint effect of a backgating noise and an instrumental disturbance. IEEE Trans. Instrum. Meas., 57(3):509-517.

[9]Khuchua, N.P., Khvedelidze, L.V., Gorev, N.B., Privalov, E.N., Shur, M.S., 2002. Determination of deep trap concentration at channel-substrate interface in GaAs MESFET using sidegating measurements. Sol.-State Electron., 46(9):1463-1466.

[10]Li, Z.M., McAlister, S.P., McMullan, W.G., Hurd, C.M., Day, D.J., 1990. Impact ionization of deep traps in semi-insulating GaAs substrates. J. Appl. Phys., 67(12):7368-7372.

[11]Lin, H.C., Kim, S.K., Chang, D., Xuan, Y., Mohammadi, S., Ye, P.D., Lu, G., Facchetti, A., Marks, T.J., 2007. Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics. Appl. Phys. Lett., 91(9):092103-1-092103-3.

[12]Reklaitis, A., Krotkus, A., Geizutis, A., Asche, M., 1999. S-type negative differential conductivity and voltage switching due to the avalanche in semiconductor heterostructures. Semicond. Sci. Technol., 14(4):341-344.

[13]Wong, H., 2003. Low-frequency noise study in electron devices: review and update. Microelectron. Reliab., 43(4):585-599.

[14]Zhao, F.C., Ding, Y., Xia, G.Q., Tan, H.Z., 2000. Hysteresis with nonequilibrium characteristics in sidegating effect of GaAs devices. J. Appl. Phys., 87(3):1482-1484.

[15]Zutavern, F.J., Glover, S.F., Swalby, M.E., Cich, M.J., Mar, A., Loubriel, G., Roose, L.D., White, F.E., 2009. GaAs PCSSs for DC Applications. IEEE Pulsed Power Conf., p.1448-1453.

Open peer comments: Debate/Discuss/Question/Opinion


Please provide your name, email address and a comment

Journal of Zhejiang University-SCIENCE, 38 Zheda Road, Hangzhou 310027, China
Tel: +86-571-87952783; E-mail: cjzhang@zju.edu.cn
Copyright © 2000 - 2024 Journal of Zhejiang University-SCIENCE