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CLC number: TN432

On-line Access: 2012-12-09

Received: 2012-04-15

Revision Accepted: 2012-08-15

Crosschecked: 2012-10-22

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Journal of Zhejiang University SCIENCE C 2012 Vol.13 No.12 P.937-943

http://doi.org/10.1631/jzus.C1200112


A low drift current reference based on PMOS temperature correction technology


Author(s):  Yi-die Ye, Le-nian He, Ya-dan Shen

Affiliation(s):  Institute of Very Large Scale Integrated Circuits Design, Zhejiang University, Hangzhou 310027, China

Corresponding email(s):   yeyidie@nbu.edu.cn, helenian@vlsi.zju.edu.cn

Key Words:  Current reference, Cross structure, PMOS cascode, Temperature coefficient, Low drift


Yi-die Ye, Le-nian He, Ya-dan Shen. A low drift current reference based on PMOS temperature correction technology[J]. Journal of Zhejiang University Science C, 2012, 13(12): 937-943.

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DOI - 10.1631/jzus.C1200112


Abstract: 
A low drift current reference based on PMOS temperature correction technology is proposed. To achieve the minimum temperature coefficient (TC), the PMOS cascode current mirror is designed as a cross structure. By exchanging the bias for two layers of the self-biased PMOS cascode structure, the upper PMOS, which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure, is forced to work in the linear region. As the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy, it was designed using a CSMC 1 μm 40 V BCD process. Simulation shows that the TC of the reference current was only 23.8×10−6/°C over the temperature range of −40–120 °C under the typical condition.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

Reference

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