Full Text:   <1191>

CLC number: TN432

On-line Access: 2013-03-05

Received: 2012-09-21

Revision Accepted: 2013-01-23

Crosschecked: 2013-02-25

Cited: 1

Clicked: 2150

Citations:  Bibtex RefMan EndNote GB/T7714

-   Go to

Article info.
1. Reference List
Open peer comments

Journal of Zhejiang University SCIENCE C 2013 Vol.14 No.3 P.205-213


An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator

Author(s):  Li-heng Lou, Ling-ling Sun, Jun Liu, Hai-jun Gao

Affiliation(s):  Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China; more

Corresponding email(s):   lynn_lo@163.com, sunll@hdu.edu.cn

Key Words:  Layout optimizing, Modeling, PSP, Charge model, Cross-coupled, Metal-oxide-semiconductor (MOS), Voltage controlled oscillator (VCO)

Li-heng Lou, Ling-ling Sun, Jun Liu, Hai-jun Gao. An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator[J]. Journal of Zhejiang University Science C, 2013, 14(3): 205-213.

@article{title="An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator",
author="Li-heng Lou, Ling-ling Sun, Jun Liu, Hai-jun Gao",
journal="Journal of Zhejiang University Science C",
publisher="Zhejiang University Press & Springer",

%0 Journal Article
%T An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator
%A Li-heng Lou
%A Ling-ling Sun
%A Jun Liu
%A Hai-jun Gao
%J Journal of Zhejiang University SCIENCE C
%V 14
%N 3
%P 205-213
%@ 1869-1951
%D 2013
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.C1200268

T1 - An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator
A1 - Li-heng Lou
A1 - Ling-ling Sun
A1 - Jun Liu
A1 - Hai-jun Gao
J0 - Journal of Zhejiang University Science C
VL - 14
IS - 3
SP - 205
EP - 213
%@ 1869-1951
Y1 - 2013
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.C1200268

This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors (MOSFETs) with optimized layout in the voltage controlled oscillator (VCO). The model employs a PSP charge model to characterize the bias-dependent extrinsic capacitance instead of numerical functions with strong non-linearity. The simulation convergence is greatly improved by this method. An original scheme is developed to extract the parameters of the PSP charge model based on S-parameters measurement. The interconnection parasitics of the cross-coupled MOSFETs are modeled based on vector fitting. The model is verified with an LC VCO design, and exhibits excellent convergence during simulation. The results show improvements as high as 60.5% and 61.8% in simulation efficiency and accuracy, respectively, indicating that the proposed model better characterizes optimized cross-coupled MOSFETs in advanced radio frequency (RF) circuit design.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article


[1]Chan, C., Chen, S., Tsai, M., Hsu, S.S.H., 2008. Wiring effect optimization in 65-nm low-power NMOS. IEEE Lett. Electron Dev., 29(11):1245-1247.

[2]de Ranter, C.R.C., van der Plas, G., Steyaert, M.S.J., Gielen, G.G.E., Sansen, W.M.C., 2002. CYCLONE: automated design and layout of RF LC-oscillators. IEEE Trans. CAD Integr. Circ. Syst., 21(10):1161-1170.

[3]Doan, C.H., Emami, S., Niknejad, A.M., Brodersen, R.W., 2005. Millimeter-wave CMOS design. IEEE J. Sol.-State Circ., 40(1):144-155.

[4]Gustavsen, B., Semlyen, A., 1999. Rational approximation of frequency domain responses by vector fitting. IEEE Trans. Power Del., 14(3):1052-1061.

[5]Hajimiri, A., Lee, T.H., 1998. A general theory of phase noise in electrical oscillators. IEEE J. Sol.-State Circ., 33(2):179-194.

[6]Heydari, B., Bohsali, M., Adabi, E., Niknejad, A.M., 2007. Millimeter-wave devices and circuit blocks up to 104 GHz in 90 nm CMOS. IEEE J. Sol.-State Circ., 42(12):2893-2903.

[7]Kwon, I., Je, M., Lee, K., Shin, H., 2002. A simple and analytical parameter-extraction method of a microwave MOSFET. IEEE Trans. Microw. Theory Tech., 50(6):1503-1509.

[8]Li, X., Wu, W., Gildenblat, G., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M., van Langevelde, R., 2008. PSP 102.3. Available from http://pspmodel.asu.edu/downloads/psp102p3_summary.pdf [Accessed on Jan. 19, 2013].

[9]Liu, W., Jin, X., Chen, J., Jeng, M.C., Liu, Z., Cheng, Y., Chen, K., Chan, M., Hui, K., Huang, J., et al., 1999. BSIM3v3.2 Manual. Available from http://www.eecs.berkeley.edu/Pubs/TechRpts/1999/ERL-99-18.pdf [Accessed on Jan. 19, 2013].

[10]Nagase, H., Tanabe, A., Hayashi, Y., 2010. A Novel Small Capacitance RF-MOSFET with Small-Resistance Long-Finger Gate Electrode. IEEE MTT-S Int. Microwave Symp. Digest, p.944-947.

[11]Nakamura, A., Yoshikawa, N., Miyazako, T., Oishi, T., Ammo, H., Takeshita, K., 2006. Layout Optimization of RF CMOS in the 90 nm Generation by a Physics-Based Model Including the Multi-finger Wiring Effect. IEEE Radio Frequency Integrated Circuits Symp., p.1-4.

Open peer comments: Debate/Discuss/Question/Opinion


Please provide your name, email address and a comment

Journal of Zhejiang University-SCIENCE, 38 Zheda Road, Hangzhou 310027, China
Tel: +86-571-87952783; E-mail: cjzhang@zju.edu.cn
Copyright © 2000 - Journal of Zhejiang University-SCIENCE