Full Text:   <270>

CLC number: O439

On-line Access: 2019-05-14

Received: 2018-08-11

Revision Accepted: 2018-12-02

Crosschecked: 2019-04-11

Cited: 0

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Citations:  Bibtex RefMan EndNote GB/T7714


Shang-jian Zhang


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Frontiers of Information Technology & Electronic Engineering  2019 Vol.20 No.4 P.472-480


Heterogeneous III-V silicon photonic integration: components and characterization

Author(s):  Shang-jian Zhang, Yong Liu, Rong-guo Lu, Bao Sun, Lian-shan Yan

Affiliation(s):  School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; more

Corresponding email(s):   sjzhang@uestc.edu.cn, yongliu@uestc.edu.cn

Key Words:  Heterogeneous photonic integration, Optical interconnection, On-wafer characterization

Shang-jian Zhang, Yong Liu, Rong-guo Lu, Bao Sun, Lian-shan Yan. Heterogeneous III-V silicon photonic integration: components and characterization[J]. Frontiers of Information Technology & Electronic Engineering, 2019, 20(4): 472-480.

@article{title="Heterogeneous III-V silicon photonic integration: components and characterization",
author="Shang-jian Zhang, Yong Liu, Rong-guo Lu, Bao Sun, Lian-shan Yan",
journal="Frontiers of Information Technology & Electronic Engineering",
publisher="Zhejiang University Press & Springer",

%0 Journal Article
%T Heterogeneous III-V silicon photonic integration: components and characterization
%A Shang-jian Zhang
%A Yong Liu
%A Rong-guo Lu
%A Bao Sun
%A Lian-shan Yan
%J Frontiers of Information Technology & Electronic Engineering
%V 20
%N 4
%P 472-480
%@ 2095-9184
%D 2019
%I Zhejiang University Press & Springer
%DOI 10.1631/FITEE.1800482

T1 - Heterogeneous III-V silicon photonic integration: components and characterization
A1 - Shang-jian Zhang
A1 - Yong Liu
A1 - Rong-guo Lu
A1 - Bao Sun
A1 - Lian-shan Yan
J0 - Frontiers of Information Technology & Electronic Engineering
VL - 20
IS - 4
SP - 472
EP - 480
%@ 2095-9184
Y1 - 2019
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/FITEE.1800482

Heterogeneous III-V silicon (Si) photonic integration is considered one of the key methods for realizing power and cost-effective optical interconnections, which are highly desired for future high-performance computers and datacenters. We review the recent progress in heterogeneous III-V/Si photonic integration, including transceiving devices and components. We also describe the progress in the on-wafer characterization of photonic integration circuits, especially on the heterogeneous III-V/Si platform.




Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article


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