Full Text:   <315>

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CLC number: TN92; TN43

On-line Access: 2020-02-27

Received: 2019-09-12

Revision Accepted: 2019-12-31

Crosschecked: 2020-01-27

Cited: 0

Clicked: 448

Citations:  Bibtex RefMan EndNote GB/T7714

 ORCID:

Yi-Ming Yu

https://orcid.org/0000-0003-0616-2994

Kai Kang

https://orcid.org/0000-0002-8878-2080

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Frontiers of Information Technology & Electronic Engineering  2020 Vol.21 No.1 P.97-115

10.1631/FITEE.1900491


Analysis and design of transformer-based CMOS ultra-wideband millimeter-wave circuits for wireless applications


Author(s):  Yi-Ming Yu, Kai Kang

Affiliation(s):  School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China

Corresponding email(s):   kangkai@uestc.edu.cn

Key Words:  CMOS, Millimeter-wave (mm-Wave), Ultra-wideband, Transformer, Low-noise amplifier, Injection-locked frequency tripler, Injection-locked frequency divider, Mixer


Yi-Ming Yu , Kai Kang . Analysis and design of transformer-based CMOS ultra-wideband millimeter-wave circuits for wireless applications[J]. Frontiers of Information Technology & Electronic Engineering, 2020, 21(1): 97-115.

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Abstract: 
With a lot of millimeter-wave (mm-Wave) applications being issued, wideband circuits and systems have attracted much attention because of their strong applicability and versatility. In this paper, four transformer-based ultra-wideband mm-Wave circuits demonstrated in CMOS technologies are reviewed from theoretical analysis, implementation, to performance. First, we introduce a mm-Wave low-noise amplifier with transformer-based Gm-boosting and pole-tuning techniques. It achieves wide operating bandwidth, low noise figure, and good gain performance. Second, we review an injection-current-boosting technique which can significantly increase the locking range of mm-Wave injection-locked frequency triplers. Based on the injection locked principle, we also discuss an ultra-wideband mm-Wave divider with the transformer-based high-order resonator. Finally, an E-band up-conversion mixer is presented; using the two-path transconductance stage and transformer-based load, it obtains good linearity and a large operating band.

基于变压器CMOS超宽带毫米波电路分析与设计综述

余益明,康凯
电子科技大学电子科学与工程学院,中国成都市,611731

摘要:近年来,由于大量毫米波无线应用的产生,具有更强通用性的宽带毫米波电路和系统引起广泛关注。总结了4种基于片上变压器结构超宽带毫米波电路的理论分析、设计方法和综合性能。其一为毫米波低噪声放大器,采用基于变压器的跨导增强和极点调谐技术;通过采用这两种技术,该电路同时实现了较大工作带宽、低噪声系数和良好功率增益。其二为毫米波注入锁定三倍频器,采用注入电流增强技术,有效拓展了倍频器的锁定带宽。进一步,采用类似注入锁定技术结合变压器高阶谐振腔方案,实现了一款超宽带毫米波注入锁定分频器。最后,介绍了一款E波段上混频器,其采用两路跨导并联结构和基于变压器的多极点负载,实现了优异线性度和较大工作带宽。

关键词:硅基集成电路;毫米波;超宽带;变压器;低噪声放大器;倍频器;分频器;混频器

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

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