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Journal of Zhejiang University SCIENCE A 2001 Vol.2 No.2 P.174-178

http://doi.org/10.1631/jzus.2001.0174


A MICROGAP SURGE ABSORBER FABRICATED USING CONVENTIONAL SEMICONDUCTOR TECHNOLOGY


Author(s):  LI Hong, RUAN Hang-yu

Affiliation(s):  Faculty of Information Science and Technology, Ningbo University, Ningbo 315211, China; more

Corresponding email(s): 

Key Words:  surge absorber, gas discharge, microgap, semiconductor technology


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LI Hong, RUAN Hang-yu. A MICROGAP SURGE ABSORBER FABRICATED USING CONVENTIONAL SEMICONDUCTOR TECHNOLOGY[J]. Journal of Zhejiang University Science A, 2001, 2(2): 174-178.

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Abstract: 
A new type microgap surge absorber fabricated by only semiconductor technique has in it a special structure silicon chip which forms microgaps for gas discharge with electrodes, and has advantages such as small size, low cost, suitability for mass production besides the desirable characteristics that common microgap surge absorbers have. Applications of this absorber in communication facilities are discussed.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

Reference

[1] Ando, K.,Oshige, T.,Tachibana, K. et al.,1985. Discharge Processes in a Low-Voltage Microgap Surge Absorber. IEEE Trans., IA-21(6):1349-1353.

[2] Baizer, Y.P.,1991. Gas Discharge Physics, Springer-Verlag.

[3] Boylett, F.D.A., Macleam, I.G.,1971. The propagation of electric discharge across the surface of an electrolyte, Proc.Roy.Soc., A324: 469.

[4] Lebedeva,N.N., Orbukh, V.I. and Salamov, B.G.,1996. Investigation of the Effect of Discharge Plasma Stabilization by a Semiconductor, J.Phys.III France, 6: 797-805.

[5] Tachibana, K., Okubo, S. and Oshige, T., 1980. The discharge of microgaps and their application to surge absorber(in Japanese). Trans. Inst. Elec. Eng. Japan, 100-A(3):169-176.

[6] Xu, X. J. And Zhu, D. C.,1996. Gas Discharge Physics, Fudan University Press, Shanghai, p.121-134.

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