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Received: 2008-06-27

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Journal of Zhejiang University SCIENCE A 2009 Vol.10 No.1 P.7~16


Measurement of the thermal transport properties of dielectric thin films using the micro-Raman method

Author(s):  Shuo HUANG, Xiao-dong RUAN, Xin FU, Hua-yong YANG

Affiliation(s):  State Key Laboratory of Fluid Power Transmission and Control, Zhejiang University, Hangzhou 310027, China

Corresponding email(s):   xfu@zju.edu.cn

Key Words:  Thermal conductivity, Dielectric thin films, Submicrometer- or nanometer-scale, Porous silicon, Thermal effect micro-systems (TEMS)

Shuo HUANG, Xiao-dong RUAN, Xin FU, Hua-yong YANG. Measurement of the thermal transport properties of dielectric thin films using the micro-Raman method[J]. Journal of Zhejiang University Science A, 2009, 10(1): 7~16.

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author="Shuo HUANG, Xiao-dong RUAN, Xin FU, Hua-yong YANG",
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%T Measurement of the thermal transport properties of dielectric thin films using the micro-Raman method
%A Xiao-dong RUAN
%A Xin FU
%A Hua-yong YANG
%J Journal of Zhejiang University SCIENCE A
%V 10
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%D 2009
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.A0820493

T1 - Measurement of the thermal transport properties of dielectric thin films using the micro-Raman method
A1 - Shuo HUANG
A1 - Xiao-dong RUAN
A1 - Xin FU
A1 - Hua-yong YANG
J0 - Journal of Zhejiang University Science A
VL - 10
IS - 1
SP - 7
EP - 16
%@ 1673-565X
Y1 - 2009
PB - Zhejiang University Press & Springer
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DOI - 10.1631/jzus.A0820493

The micro-Raman method is a non-contact and non-destructive method for thermal conductivity measurement. To reduce the measurement error induced by the poor fit of the basic equation of the original micro-Raman method, we developed a new basic equation for the heat source of a Gaussian laser beam. Based on the new basic equation, an analytical heat transfer model has been built to extend the original micro-Raman method to thin films with submicrometer- or nanometer-scale thickness. Experiments were performed to measure the thermal conductivity of dielectric thin films with submicrometer- or nanometer-scale thickness. The thermal resistance of the interface between dielectric thin films and their silicon substrate was also obtained. The obtained thermal conductivity of silicon dioxide film is 1.23 W/(m·K), and the interface thermal resistance between silicon dioxide film and substrate is 2.35×10−8 m2·K/W. The thermal conductivity and interface thermal resistance of silicon nitride film are 1.07 W/(m·K) and 3.69×10−8 m2·K/W, respectively. The experimental results are consistent with reported data.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article


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