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CLC number: TN751

On-line Access: 2013-04-03

Received: 2012-09-27

Revision Accepted: 2013-01-07

Crosschecked: 2013-03-22

Cited: 1

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Citations:  Bibtex RefMan EndNote GB/T7714

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Journal of Zhejiang University SCIENCE C 2013 Vol.14 No.4 P.279-282

http://doi.org/10.1631/jzus.C12MNT07


High Q, high frequency, high overtone bulk acoustic resonator with ZnO films


Author(s):  Meng-wei Liu, Ming-bo Zhu, Jun-hong Li, Cheng-hao Wang

Affiliation(s):  State Key Laboratory of Acoustics, Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190, China

Corresponding email(s):   liumw@mail.ioa.ac.cn

Key Words:  Bulk acoustic wave resonator, Quality factor (Q), ZnO film, Mason’, s model


Meng-wei Liu, Ming-bo Zhu, Jun-hong Li, Cheng-hao Wang. High Q, high frequency, high overtone bulk acoustic resonator with ZnO films[J]. Journal of Zhejiang University Science C, 2013, 14(4): 279-282.

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author="Meng-wei Liu, Ming-bo Zhu, Jun-hong Li, Cheng-hao Wang",
journal="Journal of Zhejiang University Science C",
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pages="279-282",
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publisher="Zhejiang University Press & Springer",
doi="10.1631/jzus.C12MNT07"
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%A Ming-bo Zhu
%A Jun-hong Li
%A Cheng-hao Wang
%J Journal of Zhejiang University SCIENCE C
%V 14
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%DOI 10.1631/jzus.C12MNT07

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T1 - High Q, high frequency, high overtone bulk acoustic resonator with ZnO films
A1 - Meng-wei Liu
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A1 - Jun-hong Li
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%@ 1869-1951
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PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.C12MNT07


Abstract: 
bulk acoustic wave resonators with piezoelectric films have been widely explored for the small size and high quality factor (Q) at GHz. This paper describes a high overtone bulk acoustic resonator (HBAR) based on Al/ZnO/Al sandwich layers and c-axis sapphire substrate. znO film with high quality c-axis orientation has been obtained using DC magnetron sputtering. The fabricated HBAR presents high Q at the multiple resonances from a 0.5–4.0 GHz wide band with a total size (including the contact pads) of 0.6 mm×0.3 mm×0.4 mm. The device exhibits the best acoustic coupling at around 2.4 GHz, which agrees with the simulation results based on the one-dimensional Mason equivalent circuit model. The HBAR also demonstrates Q values of 30 000, 25 000, and 6500 at 1.49, 2.43, and 3.40 GHz, respectively. It is indicated that the HBAR has potential applications for the low phase noise high frequency oscillator or microwave signal source.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

Reference

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