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Journal of Zhejiang University SCIENCE A 2006 Vol.7 No.3 P.472~476

http://doi.org/10.1631/jzus.2006.A0472


Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide


Author(s):  Xu Xuan-qian, Ye Hui, Zou Tong

Affiliation(s):  State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China

Corresponding email(s):   xqianx@hotmail.com, hui_ye@hotmail.com

Key Words:  Titanium nitride (TiN), Thin film, Sputtering, Orientation, Waveguide


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Xu Xuan-qian, Ye Hui, Zou Tong. Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide[J]. Journal of Zhejiang University Science A, 2006, 7(3): 472~476.

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journal="Journal of Zhejiang University Science A",
volume="7",
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pages="472~476",
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publisher="Zhejiang University Press & Springer",
doi="10.1631/jzus.2006.A0472"
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%T Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide
%A Xu Xuan-qian
%A Ye Hui
%A Zou Tong
%J Journal of Zhejiang University SCIENCE A
%V 7
%N 3
%P 472~476
%@ 1673-565X
%D 2006
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.2006.A0472

TY - JOUR
T1 - Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide
A1 - Xu Xuan-qian
A1 - Ye Hui
A1 - Zou Tong
J0 - Journal of Zhejiang University Science A
VL - 7
IS - 3
SP - 472
EP - 476
%@ 1673-565X
Y1 - 2006
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.2006.A0472


Abstract: 
Optimal parameters for depositing titanium nitride (TiN) thin films by DC reactive magnetron sputtering were determined. TiN thin films were deposited on Si (100) substrates by DC reactive magnetron sputtering, at different temperatures, different electrical current values, and different N2/Ar ratios. Structural characteristics of TiN thin films were measured by X-ray diffraction (XRD); surface morphology of the thin films was characterized using an atomic force microscope (AFM). The electric resistivity of the TiN films was measured by a four-point probe. In the result, temperature is 500 °C, electrical current value is 1.6 A, pure N2 is the reacting gas, TiN thin film has the preferred (200) orientation, resistance is small enough for its use as bottom electrodes.

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Reference

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